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| AOT400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT400 is Pb-free (meets ROHS & Sony 259 specifications). AOT400L is a Green Product ordering option. AOT400 and AOT400L are electrically identical. TO-220 D Features VDS (V) = 75V ID = 110 A (VGS = 10V) RDS(ON) < 4.7 m (VGS = 10V) RDS(ON) < 5.2 m (VGS = 6V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 75 20 110 110 200 100 1500 300 150 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 65 0.25 Max 75 0.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOT400 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=6V, ID=30A gFS VSD IS Forward Transconductance VDS=5V, ID=30A VDS=15V, ID=70A Conditions ID=10mA, VGS=0V VDS=75V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C 2 200 4.2 7.2 4.6 106 200 0.7 1 110 8390 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1060 450 1.2 167 VGS=10V, VDS=30V, ID=30A 40 45 29 VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/s 41 90 34 64 180 80 1.5 210 10500 4.7 8.2 5.2 2.8 Min 75 1 5 100 4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOT400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 10V 175 150 5V 125 ID (A) ID(A) 100 75 50 25 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 6 Normalized On-Resistance 2.2 VGS=6V 2 1.8 1.6 1.4 1.2 1 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 12 ID=30A 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=6V,30A VGS=10V, 30A VGS=4V 0 2 2.5 3 3.5 4 4.5 5 4.5V 25C 20 40 125C 6V VDS=5V 60 80 VGS(Volts) Figure 2: Transfer Characteristics 5 RDS(ON) (m) 4 VGS=10V 3 2 0 20 40 60 80 100 1.0E+02 1.0E+01 125C 1.0E+00 10 RDS(ON) (m) IS (A) 8 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 6 25C 4 2 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOT400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 10 8 VGS (Volts) 6 4 2 0 0 40 80 120 160 200 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 TJ(Max)=175C, TA=25C 10s 100.0 ID (Amps) RDS(ON) limited 100s 10ms DC 1.0 Power (W) 800 VDS=30V ID=30A Capacitance (nF) 10 Ciss 8 6 4 Coss 2 0 0 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics 15 75 Crss 1000 TJ(Max)=175C TA=25C 10.0 600 400 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=0.5C/W 1 200 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOT400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 0.01 100 80 60 40 20 TA=25C 350 300 250 200 150 100 50 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) tA = L ID BV - VDD 0 0.00001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 120 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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