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| AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD406 is Pb-free (meets ROHS & Sony 259 specifications). AOD406L is a Green Product ordering option. AOD406 and AOD406L are electrically identical. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.0m (VGS = 10V) RDS(ON) < 5.7m (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C C Maximum 30 12 85 75 200 30 140 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W C TC=25C G TC=100C B ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJL Typ 14.2 40 0.56 Max 20 50 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD406 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=20A TJ=125C 0.8 100 4 5.8 4.6 102 0.64 5 7 5.7 1 85 10500 1.1 Min 30 0.005 1 5 100 1.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 9130 625 387 0.4 72.4 0.5 85 VGS=4.5V, VDS=15V, ID=20A 13.4 16.8 14.7 14.2 105.5 23.5 30.5 21 22 21 150 35 40 33 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it. B. The power dissipation P is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper D dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 F. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 1: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 60 ID(A) 40 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 50 4.5V 3.0V ID(A) 2.5V VGS=2V 20 125C 25C 40 30 VDS=5V 60 5.0 VGS=4.5V Normalized On-Resistance 1.8 VGS=4.5V 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=20A VGS=10V 4.5 RDS(ON) (m) 4.0 VGS=10V 3.5 3.0 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 1.0E+02 1.0E+01 12 RDS(ON) (m) ID=20A 8 125C IS (A) 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 25C 4 25C 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 10 20 30 40 50 60 70 80 90 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 12000 10000 8000 6000 4000 Coss 2000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss 1000 RDS(ON) limited 10ms ID (Amps) 0.1s 10 1s 1 TJ(Max)=150C TA=25C 10s 1ms 10s 100 80 100s Power (W) 60 40 20 DC 0 0.01 0.1 1 10 100 1000 TJ(Max)=150C TA=25C 100 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton 10 0.01 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 0.01 100 80 60 40 20 0 0.00001 120 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) tA = L ID BV - V DD Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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