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| IRFQ110 MECHANICAL DATA Dimensions in mm (inches) 7.62(.300) 1.27(.050) REF QUAD N-CHANNEL ENHANCEMENT MOSFETS 1.27(.050) REF PIN 1 INDEX 7.62(.300) 1 1.91(.075) 0.64(.025) REF FEATURES 1.91(.075) 1.60(.063) 2.16(.085) 25 19 * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * LIGHTWEIGHT * MILITARY SCREENING LEVEL OPTIONS * SPACE QUALITY LEVELS OPTIONS 18 28 1 12 5 11 11.44(.450) SQ LCC28 Ceramic Package Pin 1 - Gate 1 Pin 4 - N/C Pin 7 - N/C Pin 10 - Source 2 Pin 13 - Drain 2 Pin 16 - Source 3 Pin 19 - Drain 3 Pin 22 - Gate 4 Pin 25 - N/C Pin 2 - Source 1 Pin 5 - Drain 1 Pin 8 - Gate 2 Pin 11 - N/C Pin 14 - N/C Pin 17 - Source 3 Pin 20 - Drain 3 Pin 23 - Source 4 Pin 26 - Drain 4 Pin 28 - N/C Pin 3 - Source 1 Pin 6 - Drain 1 Pin 9 - Source 2 Pin 12 - Drain 2 Pin 15 - Gate 3 Pin 18 - N/C Pin 21 - N/C Pin 24 - Source 4 Pin 27 - Drain 4 APPLICATIONS * FAST SWITCHING * MOTOR CONTROLS * POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS FOR EACH CHIP(Tcase = 25C unless otherwise stated) VDS ID ID @Tc = 100C IDM VGS PD RJC TJ,Tstg Drain Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current * Gate Source Voltage Maximum Power Dissipation Thermal Resistance Junction to Case Operating and Storage Temperature Range 100V 1A 0.6A 4A 20V 4.5W 27.78C/W -55 to +150C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number **** Issue 1 IRFQ110 ELECTRICAL CHARACTERISTICS FOR EACH CHIP(Tcase = 25C unless otherwise stated) Parameter BVDSS Drain - Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSSF IGSSR IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr QRR Gate - Source Leakage Forward Gate - Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain Source On-State Resistance* Forward Transductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 50V RG = 24 (MOSFET switching times are essentially independent of operating temperature.) Test Conditions VGS = 0 VDS = VGS VGS = 20V VGS = -20V VDS = 80V. VGS = 10V VGS = 10V VDS = 15V VGS = 0 f = 1MHz VGS = 10V IDS = 1.0A ID = 1.0A VDS = 50V VGS =0 TC = 125C ID = 0.6A ID = 1.0A IDS = 0.6A VDS = 25V ID = 1mA ID = 250A Min. 100 2.0 Typ. Max. 4.0 100 -100 25 250 0.70 0.80 Unit V nA A S( ) 0.86 180 82 15 15 7.5 7.5 20 25 40 40 pF nC ns BODY- DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current Body , / 5 Diode Source Current* (Body Diode) Diode Forward Voltage * Reverse Recovery Time Reverse Recovery Charge 1.0 4.0 1.5 200 0.83 symbol showing the intergal P-N junction rectifier. A V ns C IS = 1.0A IF =1.0A VGS = 0 TJ = 25C di / dt = 100A/s VDD = 50V Notes * Pulse Test: Pulse Width 300s, 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number **** Issue 1 |
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