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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTA1536T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall-Sized Package permitting applied sets to be made small and slim. High Allowable Power Dissipation. Complementary to KTC3536T. C L G High Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 ) RATING -20 -20 -5 -5 -8 1.2 0.9 150 -55 150 UNIT V V V A A W J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-12V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-3A, IB=-60mA IC=-3A, IB=-60mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =-5V RL OUTPUT MIN. -20 -20 -5 200 - Storage Time tstg Fall Time tf V BE =5V -20IB1=20IB2=IC =-3A 2001. 6. 30 Revision No : 0 I TSM SE TYP. -200 -0.85 140 70 30 MAX. -0.1 -0.1 -300 -1.2 560 MHz pF UNIT A A V V V mV V - 120 - nS - 14 - 1/3 KTA1536T I C - V CE A h FE - I C -40 mA -30mA -5 COLLECTOR CURRENT I C (A) -4 -3 -2 -1 0 0 -100 -10 DC CURRENT GAIN h FE -5 0m 0m A 1K 500 300 Ta=75 C -20mA Ta=25 C Ta=-25 C -10mA -90mA -80mA -70mA -60mA IB=0mA 100 50 30 VCE =-2V -200 -300 -400 -500 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 Ta C =25 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -0.01 Ta= 25 I C /I B =20 I C /I B =50 Ta= 75 Ta C 5 =-2 C Ta= C 75 C Ta= -25 C -10 -5 -3 -1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -10K -5K -3K COLLECTOR CURRENT I C (A) I C /I B =50 I C - V BE -1.0 -0.9 -0.8 -0.7 Ta=75 C VCE =-2V -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0 -500 -300 Ta=25 C Ta=75 C -100 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A) 2001. 6. 30 Revision No : 0 Ta=-25 -1K Ta=-25 C Ta=25 C C 2/3 KTA1536T fT - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 COLLECTOR OUTPUT CAPACITANCE C ob (pF) VCE =-2V C ob - V CB 1K 500 300 f=1MHz 100 50 30 100 50 30 10 -0.01 -0.03 -0.1 -0.3 -1 -3 10 -1 -3 -5 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA COLLECTOR POWER DISSIPATION PC (W) -20 -10 COLLECTOR CURRENT I C (A) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 I C MAX.(PULSED) 50 100 S * Pc - Ta 1.2 MOUNTED ON A IC MAX (CONTINUOUS) DC 10 mS * 10 0m S* OP ER AT 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0 S* 1m S* IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) -10 -30 -0.3 -1 -3 COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 30 Revision No : 0 3/3 |
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