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| CBSL2SS NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: The ASI CBSL2SS is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .205 4L STUD D A C FEATURES: * Pg = 9.0 dB min. @ 960 MHz * P1dB = 2.0 Watts min. at 960 MHz * OmnigoldTM Metalization System B G F E H #8-32UN C MAXIMUM RATINGS IC VCBO VCER VEBO PDISS TJ TSTG JC 2.0 A 45 V 30 V 3.5 V 7.0 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 25 C/W D IM A B C D E F G H I J .161 / 4.100 .098 / 2.500 .200 / 5.100 .004 / 0.100 .425 / 10.800 .200 / 5.100 M IN IM UM inches / m m J M AXIM U M inches / m m .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800 .196 / 5.000 .110 / 2.800 .208 / 5.300 .006 / 0.150 .465 / 11.800 2.05 / 5.200 ORDER CODE: ASI10868 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE COB PG C TC = 25 C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 24 V VCC = 24 V POUT = 2.0 V IC = 100 mA f = 1.0 MHz f = 960 MHz RBE = 220 MINIMUM TYPICAL MAXIMUM 45 30 3.5 500 20 120 3.5 9.0 50 UNITS V V V A --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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