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| PROCESS Small Signal Transistor NPN - Amp/Switch Transistor Chip CP192 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 52,240 PRINCIPAL DEVICE TYPES 2N3904 CMPT3904 CMST3904 CXT3904 CZT3904 BACKSIDE COLLECTOR EPITAXIAL PLANAR 13 x 17 MILS 9.0 MILS 3.0 X 3.0 MILS 3.0 X 3.0 MILS Al - 30,000A Au - 18,000A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central TM PROCESS CP192 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) |
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