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 KSE44H Series
KSE44H Series
General Purpose Power Switching Applications
* Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A * Fast Switching Speeds * Complement to KSE45H
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCEO Collector-Emitter Voltage Parameter : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 Value 30 45 60 80 5 10 20 50 1.67 150 - 55 ~ 150 Units V V V V V A A W W C C
VEBO IC ICP PC PC TJ TSTG
Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICES IEBO hFE Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 *Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated VCEO, VEB = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 2A 35 60 1 1 1.5 50 130 300 500 140 V V V MHz pF ns ns ns Min. Typ. Max. 10 100 Units A A
VCE(sat)
IC = 8A, IB = 0.8A IC = 8A, IB = 0.4A IC = 8A, IB = 0.8A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC =20V, IC = 5A IB1 = - IB2 = 0.5A
VBE (sat) fT Cob tON tSTG tF
* Pulse test: PW300s, Duty cycle2%
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSE44H Series
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
VCE = 1V
IC = 10 IB
hFE, DC CURRENT GAIN
100
1
V BE(sat)
10
0.1
V CE(sat)
1 0.01
0.1
1
10
0.01 0.01
0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
100
f=100MHZ
IC[A], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
10
s 1m
DC
100
s 1
1
44H 1,2 44H 4,5 44H 7,8 44H 10,11
0.1 1 10
10s 100s
10 1 10 100
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Safe Operating Area
60
50
PC[W], POWER DISSIPATION
40
30
20
10
0 0 25 50
o
75
100
125
150
175
Tc[ C], CASE TEMPERATURE
Figure 5. Power Derating
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSE44H Series
Package Demensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3


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