 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HAT2040R Silicon N Channel Power MOS FET Power Switching ADE-208-565D (Z) 5th. Edition February 1999 Features * * * * Capable of 4 V gate drive Low drive current High density mounting Low on-resistance R DS(on) =6.2m typ Outline SOP-8 8 5 76 56 7 8 DD D D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 HAT2040R Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 20 15 120 15 2.5 150 -55 to +150 Unit V V A A A W C C 1. PW 10s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 HAT2040R Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 30 -- -- 1.0 -- -- 18 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 6.2 9.0 30 4400 950 400 90 15 18 110 440 160 170 0.9 55 Max -- 0.1 1 2.5 8.0 13.0 -- -- -- -- -- -- -- -- -- -- -- 1.17 -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns IF = 15A, VGS = 0 Note3 IF = 15A, VGS = 0 diF/ dt =20A/s Test Conditions I D = 10mA, VGS = 0 VGS = 20V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10V, I D = 1mA I D = 8A, VGS = 10V Note3 I D = 8A, VGS = 4V Note3 I D = 8A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VDD = 10V VGS = 10V I D = 15A VGS = 4V, ID = 8A VDD 10V Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 3 HAT2040R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 500 100 Maximum Safe Operation Area 10 s 10 0 s 10 Channel Dissipation Drain Current DC PW Op era tio n( 1m =1 2.0 s 0m s 1.0 PW 1 Operation in N < 1 ote 0s 4 this area is ) limited by R DS(on) 0.1 0 50 100 150 Ta (C) 200 Ambient Temperature 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Ta = 25 C 1 shot Pulse Typical Output Characteristics 50 10V 4V 3.5 V Pulse Test (A) 50 Typical Transfer Characteristics V DS = 10 V Pulse Test 40 I D (A) 40 30 ID Drain Current 3V 30 25C Tc = 75C -25C Drain Current 20 20 10 VGS = 2.5 V 10 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) 4 HAT2040R Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) 0.20 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 5 VGS = 4 V 10 V 0.16 Drain to Source Voltage 0.12 0.08 I D = 10 A 0.04 5A 2A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V) Drain to Source On State Resistance R DS(on) (m ) 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (m ) Pulse Test 16 I D = 2 A, 5 A, 10 A Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 20 Forward Transfer Admittance vs. Drain Current 100 30 10 75 C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 25 C Tc = -25 C 12 V GS = 4 V 8 2 A, 5 A, 10 A 4 0 -40 10 V 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 5 HAT2040R Body-Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) 10000 Ciss Capacitance C (pF) 3000 1000 300 Crss 100 30 10 0 10 20 30 VGS = 0 f = 1 MHz 40 50 Coss Typical Capacitance vs. Drain to Source Voltage 50 20 di/dt = 20 A/s VGS = 0, Ta = 25C 5 10 20 I DR (A) 10 0.1 0.2 0.5 1 2 Reverse Drain Current Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 50 I D = 15 A V DD = 5 V 10 V 25 V V GS 8 20 1000 500 Switching Time t (ns) Switching Characteristics 40 16 tr t d(off) t d(on) tf Drain to Source Voltage 30 V DS 20 12 Gate to Source Voltage 200 100 50 10 V DD = 25 V 10 V 5V 40 80 120 160 Gate Charge Qg (nc) 4 0 200 0 20 V GS = 4 V, V DS = 10 V RG = 50 , duty < 1 % 10 0.1 0.2 0.5 1 2 5 10 Drain Current I D (A) 20 6 HAT2040R Reverse Drain Current vs. Souece to Drain Voltage 50 Reverse Drain Current I DR (A) 40 10 V 5V V GS = 0 30 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) * ch - f ch - f = 83.3 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) u tp lse PDM PW T 0.001 1sh o D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) 7 HAT2040R Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DS = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% 8 HAT2040R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of HAT2040R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |