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 DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D121
BAS85 Schottky barrier diode
Product specification Supersedes data of 1996 Mar 20 1996 Oct 01
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES * Low forward voltage * High breakdown voltage * Guard ring protected * Hermetically-sealed small SMD package. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Blocking diodes.
Cathode indicated by a grey band.
MAM190
BAS85
DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for "automatic placement" and as such it can withstand immersion soldering.
handbook, halfpage
k
a
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IF(AV) IFRM IFSM Tstg Tj Tamb Note 1. Refer to SOD80 standard mounting conditions. PARAMETER continuous reverse voltage continuous forward current average forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature VRWM = 25 V; a = 1.57; = 0.5; note 1; Fig.2 tp 1 s; 0.5 tp = 10 ms CONDITIONS - - - - - -65 - -65 MIN. MAX. 30 200 200 300 5 +150 125 +125 V mA mA mA A C C C UNIT
1996 Oct 01
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD80 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS reverse current diode capacitance VR = 25 V; note 1; see Fig.4 f = 1 MHz; VR = 1 V; see Fig.5 240 320 400 500 800 2.3 10 CONDITIONS MAX.
BAS85
UNIT mV mV mV mV mV A pF
VALUE 320
UNIT K/W
1996 Oct 01
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
MRA540
BAS85
MSA892
250 handbook, halfpage I F(AV) (mA) 200
10 3 handbook, halfpage IF (mA) 10
2 (1) (2) (3)
150 10 100
(1) (2) (3)
1 50
0
0
50
100 Tamb ( C)
o
150
10 1
0
0.4
0.8
VF (V)
1.2
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.3 Fig.2 Derating curve.
Forward current as a function of forward voltage; typical values.
MGC682
MGC681
10 5 handbook, halfpage IR (nA) (1) 10 4
handbook, halfpage
12
Cd (pF)
10 3 (2) 10 2
8
10
4
1 (3) 10 -1 0 0 10 20 VR (V) 30 0 10 20 VR (V) 30
(1) Tamb = 85 C. (2) Tamb = 25 C. (3) Tamb = -40 C.
f = 1 MHz.
Fig.4
Reverse current as a function of reverse voltage; typical values.
Fig.5
Diode capacitance as a function of reverse voltage; typical values.
1996 Oct 01
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE
BAS85
handbook, full pagewidth
1.60 O 1.45
0.3 3.7 3.3
0.3
MBA390 - 2
Dimensions in mm. Cathode indicated by a grey band.
Fig.6 SOD80C.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Oct 01
5


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Price & Availability of BAS85
Newark

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BAS85,115
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Nexperia Small Signal Schottky Diode, Single, 30 V, 200 Ma, 800 Mv, 5 A, 125 C Rohs Compliant: Yes |Nexperia BAS85,115 10000: USD0.064
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Vishay Intertechnologies Schottky Rectifier; Repetitive Peak Reverse Voltage:30V; Average Forward Current:100Ma; Diode Configuration:Single; Diode Case Style:Sod-80; No. Of Pins:2Pins; Forward Voltage Max:800Mv; Forward Surge Current:600Ma; Product Range:- Rohs Compliant: Yes |Vishay BAS85-GS18 BuyNow
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BAS85-GS18
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Vishay Intertechnologies Sml Sgnl Schottky Diode, 30V, 0.2A/Sod80 Rohs Compliant: Yes |Vishay BAS85-GS18 100: USD0.144
50: USD0.19
25: USD0.237
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DigiKey

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BAS85-GS08
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BAS85,135
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Avnet Americas

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