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FDN371N September 2001 FDN371N 20V N-Channel PowerTrench(R) MOSFET General Description This 20V N-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications. Features * 2.5 A, 20 V. RDS(ON) = 50 m @ VGS = 4.5 V RDS(ON) = 60 m @ VGS = 2.5 V Applications * * * Load switch Battery protection Power management * Low gate charge (7.6 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) D D S G S SuperSOT -3 TM G TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 20 12 (Note 1a) Units V V A W C 2.5 10 0.5 0.46 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 C/W C/W Package Marking and Ordering Information Device Marking 371 Device FDN371N Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2001 Fairchild Semiconductor Corporation FDN371N Rev C (W) FDN371N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 A 13 1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, 0.5 1.0 -3 22 29 31 1.5 V mV/C ID = 250 A,Referenced to 25C VGS = 4.5 V, ID = 2.5 A VGS = 2.5 V, ID = 2.3 A VGS = 4.5V, ID = 2.5 A, TJ = 125C VGS = 4.5V, VDS = 5 V VDS = 5V, ID = 2.5 A 50 60 75 m ID(on) gFS 5 16 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 815 197 106 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 7 9 17 5.5 14 18 31 11 10.7 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 2.5 A, 7.6 1.5 2 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.42 0.6 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN371N Rev C (W) FDN371N Typical Characteristics 30 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V 25 ID , DRAIN CURRENT (A) 3.0V 2.5V 2 VGS = 2.0V 1.8 1.6 1.4 1.2 1 0.8 20 15 2.0V 10 2.5V 3.0V 3.5V 5 4.5V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 10 20 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON) , ON-RESISTANCE (OHM) ID = 2.5A VGS = 4.5V 1.4 0.06 0.05 1.2 TA = 125 C 0.04 o 1 0.03 TA = 25 C 0.02 o 0.8 0.6 -50 -25 0 25 50 75 100 o 0.01 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 20 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 25 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 15 o VGS = 0V 10 1 0.1 0.01 0.001 0.0001 125oC TA = 125 oC 25 C -55 C o o 10 5 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN371N Rev C (W) FDN371N Typical Characteristics 5 VGS , GATE-SOURCE VOLTAGE (V) 1200 ID = 2.5A VDS = 5V 10V CAPACITANCE (pF) 1000 CISS 800 600 400 COSS 200 CRSS f = 1 MHz VGS = 0 V 4 15V 3 2 1 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 1ms 1 10ms 100ms 1s DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 270oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 100s P(pk), PEAK TRANSIENT POWER (W) 20 Figure 8. Capacitance Characteristics. 15 10 5 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) + RJA 0.2 RJA = 270 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN371N Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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