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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW96 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups. The transistor has a 12" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW96
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) s.s.b. (class-A) Note 1. dt at 200 W P.E.P. VCE V 50 50 40 f MHz 1,6 - 28 108 28 PL W 25 - 200 (P.E.P.) > 200 typ. 50 (P.E.P.) typ. Gp dB 13,5 > 19 % 40(1) < - typ. -40 < - 6,5 typ. 67 d3 dB -30 < - -40 d5 dB -30 IC(ZS) (IC) A 0,1 (6) (4)
PIN CONFIGURATION
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 4
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 45 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW96
110 V 55 V 4V 12 A 40 A 340 W 200 C
-65 to + 150 C
102 handbook, halfpage
MGP685
MGP686
handbook, halfpage
400
Ptot IC (A) (W) 300 derate by 1.58 W/K
10 Th = 70 C Tmb = 45 C 200
100
1.35 W/K
1 10
0 VCE (V) 102 0 50 100 Th (C) 150
I Continuous d.c. operation II Continuous r.f. operation; f > 1 MHz III Short-time operation during mismatch; f > 1 MHz
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE (dissipation = 150 W; Tmb = 100 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 0,63 K/W 0,45 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 55 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE typ. 15 to IC = 7 A; VCE = 5 V D.C. current gain ratio of matched devices(1) IC = 7 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 20 A; IB = 4 A Transition frequency at f = 100 -IE = 7 A; VCB = 45 V -IE = 20 A; VCB = 45 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 50 V Feedback capacitance at f = 1 MHz IC = 150 mA; VCE = 50 V Collecting-flange capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. Cc Cre Ccf typ. typ. typ. MHz(2) fT fT typ. typ. VCEsat typ. hFE1/hFE2 ESBO ESBR > > ICES < V(BR)EBO > V(BR)CEO > V(BR)CES >
BLW96
110 V 55 V 4V 10 mA 20 mJ 20 mJ 30 50
1,2 1,9 V 235 MHz 245 MHz
280 pF 170 pF 4,4 pF
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
MGP687
MGP688
handbook, halfpage
10
handbook, halfpage
50
-IE (A) 1 Th = 70 C 25 C
hFE 40 VCE = 45 V 15 V 30 5V
20 10-1 10
10-2 500
0 750 1000 VBE (mV) 1250 0 10 20 IC (A) 30
Fig.4 Typical values; VCE = 40 V.
Fig.5 Typical values; Tj = 25 C.
MGP689
MGP690
handbook, halfpage
300
handbook, halfpage
1000
fT (MHz) 200
VCB = 45 V 15 V 5V
Cc (pF) 750
500
100 250
typ
0 0 10 20 -IE (A) 30
0 0 25 50 VCB (V) 75
Fig.6 Typical values; f = 100 MHz; Tj = 25 C.
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 50 V; Th = 25 C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 25 to 200 (P.E.P.) Gp dB > 13,5 dt (%) > 40 IC (A) < 5,0 d3 (1) dB < -30
C10 C1 50 L1 C2 C3 C4 L2 R2 R1 T.U.T. C6 L3 C12 C13 C14 L4 C11 50
BLW96
d5(1) dB < -30
IC(ZS) A 0,1
at 200 W (P.E.P.)
handbook, full pagewidth
C5 C7 temperature compensated bias (Ri < 0.1 ) C8 C9 +VCC
MGP691
Fig.8 Test circuit; s.s.b. class-AB.
List of components: C1 = C4 = C10 = C14 = 100 pF film dielectric trimmer C2 = 27 pF ceramic capacitor (500 V) C3 = 270 pF polysterene capacitor (630 V) C5 = C7 = C8 = 220 nF multilayer ceramic chip capacitor C6 = 27 pF multilayer ceramic chip capacitor (500 V; ATC(2)) C9 = 47 F/63 V electrolytic capacitor C11 = 2 x 36 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel C12 = 2 x 43 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel C13 = 43 pF multilayer ceramic chip capacitor (500 V; ATC(2)) L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 x 5 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 150 nH; 5 turns Cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2 x 5 mm L4 = 197 nH; 5 turns Cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2 x 5 mm R1 = 0,66 ; parallel connection of 5 x 3,3 metal film resistors (PR37; 5%; 1,6 W each) R2 = 27 carbon resistor ( 5%; 0,5 W) Notes 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. 2. ATC means American Technical Ceramics. August 1986 6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
handbook, halfpage
-25
MGP692
MGP693
handbook, halfpage
100
20 Gp (dB) Gp 15
dt (%) d3, d5 (dB) 75
-35
50 d3 dt 25 d5
10
5
-45
0 0 100 200 P.E.P. (W) 300 0 100 200 P.E.P. (W)
0 300
VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
Fig.9
Intermodulation distortion as a function of output power.(1)
Fig.10 Double-tone efficiency and power gain as a function of output power.
Ruggedness The BLW96 is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 150 W (P.E.P.) or a load mismatch (VSWR = 5 through all phases) up to 200 W (P.E.P.) under the following conditions: VCE = 45 V; f = 28 MHz; Th = 70 C; Rth mb-h = 0,2 K/W.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
handbook, halfpage
30
MGP694
andbook, halfpage
4
MGP695
Gp (dB) 20
ri, -xi () 3
ri
-xi 2
10 1 ri -xi 0 1 10 f (MHz) 102 0 1 10 f (MHz) 102
VCE = 50 V; IC(ZS) = 0,1 A; PL = 200 W (P.E.P.); Th = 25 C; ZL = 5 ; neutralizing capacitor: 47 pF
VCE = 50 V; IC(ZS) = 0,1 A; PL = 200 W (P.E.P.); Th = 25 C; ZL = 5 ; neutralizing capacitor: 47 pF
Fig.11 Power gain as a function of frequency.
Fig.12 Input impedance (series components) as a function of frequency.
Figs 11 and 12 are typical curves and hold for one transistor of a push-pull amplifier with cross-neutralization in s.s.b. class-AB operation.
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 C f (MHz) 108 VCE (V) 50 PL (W) 200 PS (W) typ. 45 Gp (dB) typ. 6,5 IC (A) typ. 6
BLW96
(%) typ. 67
MGP696
MGP697
handbook, halfpage
400
handbook, halfpage
10
100 (%) Gp 75
PL (W) 300
Gp (dB) 7.5
typ 200 5
50
100
2.5
25
0 0 25 50 PS (W) 75
0 0 100 200 PL (W)
0 300
Fig.13 VCE = 50 V; f = 108 MHz; Th = 25 C.
Fig.14 VCE = 50 V; f = 108 MHz; Th = 25 C; typical values.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
handbook, halfpage
1
MGP698
handbook, halfpage
6
MGP699
ri, xi () 0.5 ri
RL, XL () 4 RL
XL xi
0
2
-0.5 25
75
f (MHz)
125
0 25
75
f (MHz)
125
Typical values; VCE = 50 V; PL = 200 W; Th = 25 C; class-B operation
Typical values; VCE = 50 V; PL = 200 W; Th = 25 C; class-B operation
Fig.15 Input impedance (series components).
Fig.16 Load impedance (series components).
MGP700
handbook, halfpage
20
Gp (dB)
10
0 25
75
f (MHz)
125
Typical values; VCE = 50 V; PL = 200 W; Th = 25 C; class-B operation
Fig.17
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in s.s.b. class-A operation (linear power amplifier) VCE = 40 V; Th = 25 C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W typ. 50 (P.E.P.) Gp dB typ. 19 IC A 4 d3(1) dB typ. -40
BLW96
d5(1) dB < -40
handbook, full pagewidth
C9 L4 C1 50 L1 T.U.T. L2 R1 L3 C7 C8 C10 50
C2
C3 C5 C4 +VBB C6 +VCC
MGP701
Fig.18 Test circuit; s.s.b. class-A.
List of components: C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = 220 nF polyester capacitor (100 V) C4 = 100 F/4 V electrolytic capacitor C5 = 2 x 330 nF polyester capacitors (100 V) in parallel C6 = 47 F/63 V electrolytic capacitor C7 = C10 = 2 x 82 pF ceramic capacitors (500 V) in parallel C8 = C9 = 10 to 150 pF air dielectric trimmer L1 = 45 nH; 2 turns enamelled Cu wire (1,6 mm); int. dia. 8,0 mm; length 4,0 mm; leads 2 x 3 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 110 nH; 4 turns enamelled Cu wire (2,0 mm); int. dia. 10,0 mm; length 8,0 mm; leads 2 x 2 mm L4 = 210 nH; 5 turns enamelled Cu wire (2,0 mm); int. dia. 12,0 mm; length 10,0 mm; leads 2 x 2 mm R1 = 27 carbon resistor ( 5%; 0,5 W) Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
handbook, full pagewidth
-30
MGP702
d3 (dB) IC = 3 A -40 4A 5A
-50
-60
0
20
40
60
80
P.E.P. (W)
100
Fig.19 Third order intermodulation distortion as a function of output power.(1) Typical values; VCE = 40 V; Th = 25 C; f1 = 28,000 MHz; f2 = 28,001 MHz.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW96
SOT121B
D
A F q U1 C B
H L b
c
4
3
w2 M C A
p
U2
D1
U3
w1 M A B
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 L 7.93 6.32 p 3.30 3.05 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.51 0.02 w2 1.02 45 0.312 0.130 0.249 0.120 0.175 0.725 0.154 0.04
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW96
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
14

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