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RFP6P08, RFP6P10
Data Sheet October 1999 File Number 1490.2
-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046.
Features
* -6A, -80V and -100V * rDS(ON) = 0.600 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device
BRAND
Ordering Information
PART NUMBER RFP6P08 RFP6P10 PACKAGE TO-220AB TO-220AB RFP6P08 RFP6P10
* Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
RFP6P08, RFP6P10
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFP6P08 80 80 6 20 20 60 0.48 -55 to 150 300 260 RFP6P10 100 100 6 20 20 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V -80 -100 VGS(TH) IDSS VGS = VDS , ID = 250A (Figure 7) VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS (TC = 125oC) -2 VDS = 25V VGS = 0V f = 1MHz (Figure 8) RFP6P08, RFP6P10 11 48 102 70 -4 1 25 100 0.6 -3.6 60 100 150 100 800 350 150 2.083 V V V A A nA V ns ns ns ns pF pF pF
oC/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage RFP6P08 RFP6P10 Gate Threshold Voltage Zero-Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case
IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC
VGS = 20V, VDS = 0V ID = 6A, VGS = -10V (Figures 5, 6) ID = 6A, VGS = -10V VDD = 50V, ID 6A RG = 50, RL = 16 VGS = -10V (Figures 13, 14)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Duration 300s max, Duty Cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = -3A ISD = 4A, dlSD/dt = 50A/s TEST CONDITIONS MIN TYP 150 MAX -1.4 UNITS V ns
2
RFP6P08, RFP6P10 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) -8 -7 -6 -5 -4 -3 -2 -1 0 25 50 75 100 125 150
0.8 0.6 0.4 0.2 0
0
50
100
150
TC, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
100 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID , DRAIN CURRENT (A)
TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A)
30 25
PULSE DURATION = 80s TC = 25oC VGS = -9V
VGS = -20V
10
ID MAX CONTINUOUS DC
20 15 10 5 0
VGS = -8V
VGS = -10V
1 VDS(MAX) = -100V RFP8P10 VDS(MAX) = -80V RFP8P08 -1 -10 -100 VDS , DRAIN TO SOURCE VOLTAGE (V) -1000
VGS = -4V
VGS = -7V VGS = -6V VGS = -5V
0.1
0
1
2
3
4
5
6
7
8
9
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
IDS(ON) , DRAIN TO SOURCE CURRENT (A)
16 VDS = 10V 14 12 10 8 6 4 2 0 0 -4 -6 -8 -2 VGS , GATE TO SOURCE VOLTAGE (V) -10 TC = 25oC TC = 125oC PULSE DURATION = 80s TC = -40oC rDS(ON) , DRAIN TO SOURCE
0.8 0.7 0.6 ON RESISTANCE 0.5 0.4 0.3 0.2 0.1 0 0
VGS = 10V PULSE DURATION = 80s
125oC
25oC
-40oC
2
4
8 12 6 10 14 ID , DRAIN CURRENT (A)
16
18
20
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
3
RFP6P08, RFP6P10 Typical Performance Curves
3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 6A VGS = -10V 2 NORMALIZED GATE THRESHOLD VOLTAGE 1
(Continued)
1.5 ID = 250A VGS = -10V
1
0.5
0 -50
50 100 150 0 TJ , JUNCTION TEMPERATURE (oC)
200
0 -50
0
50
100
150
200
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
800 VDS , DRAIN TO SOURCE VOLTAGE (V) 700 C, CAPACITANCE (pF) 600 500 400 300 COSS 200 100 0 0 -10 -20 -30 -40 VDS , DRAIN TO SOURCE VOLTAGE (V) -50 CRSS CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
100 BVDSS 75 GATE TO SOURCE VOLTAGE 10 VGS , GATE TO SOURCE VOLTAGE (V)
8 VDD = BVDSS 6
VDD = BVDSS
50
RL = 16.67 IG (REF) = 0.46mA VGS = -10V 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN TO SOURCE VOLTAGE
4 25
2
0 I (REF) 20 G IG (ACT) t, TIME (ms) I (REF) 80 G IG (ACT)
0
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0
+
VDD VDD
0V VGS
DUT tP IAS 0.01
IAS tP BVDSS VDS
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
4
RFP6P08, RFP6P10 Test Circuits and Waveforms
(Continued)
tON td(ON) tr RL 0 10%
tOFF td(OFF) tf 10%
DUT VGS RG
VDD
+
VDS VGS 0
90%
90%
10% 50% PULSE WIDTH 90% 50%
FIGURE 13. SWITCHING TIME TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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