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| (R) STTH8L06D/FP TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM IR (max) Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s s 8A 600 V 200 A 175 C 1.05 V 105 ns TO-220AC STTH8L06D K A s s Ultrafast switching Low reverse recovery current Reduces switching & conduction losses Low thermal resistance DESCRIPTION The STTH8L06FP, which is using ST Turbo2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device, available in TO-220AC and TO-220FPAC, is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current TO-220AC TO-220FPAC IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms A K TO-220FPAC STTH8L06FP Value 600 30 Tc = 150C = 0.5 Tc = 100C = 0.5 Sinusoidal 120 - 65 + 175 + 175 8 Unit V A A A C C November 2002 - Ed: 2A 1/6 STTH8L06D/FP THERMAL PARAMETERS Symbol Rth(j-c) Junction to case Parameter TO-220AC TO-220FPAC Maximum 2.5 5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 600V Tj = 25C Tj = 150C IF = 8 A Tj = 25C Tj = 150C To evaluate the maximum conduction losses use the following equation : P = 0.89 x IF(AV) + 0.022 IF2(RMS) 0.85 16 Min. Typ. Max. 8 200 1.3 1.05 V Unit A VF DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Peak forward voltage Tests conditions IF = 1 A dIF/dt = 50 A/s VR = 30V IF = 8 A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 8 A dIF/dt = 100 A/s Tj = 25C Tj = 25C Tj = 25C Min. Typ. 75 Max. 105 150 6 Unit ns ns V 2/6 STTH8L06D/FP Fig. 1: Conduction losses versus average current. P(W) 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 T Fig. 2: Forward voltage drop versus forward current. IFM(A) 100.0 Tj=150C (Maximum values) = 0.05 = 0.1 = 0.2 = 0.5 =1 10.0 Tj=150C (Typical values) Tj=25C (Maximum values) 1.0 IF(av)(A) =tp/T 8 VFM(V) tp 0.1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse = 0.2 = 0.1 = 0.5 Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAC) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 = 0.2 = 0.1 = 0.5 T 0.2 0.1 tp T 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T Single pulse tp(s) 1.E-02 1.E-01 1.E+00 0.0 1.E-03 =tp/T 1.E+00 tp 1.E+01 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 10 9 8 7 6 IF=0.5 x IF(av) IF=IF(av) VR=400V Tj=125C IF=2 x IF(av) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 1000 900 800 700 600 500 IF=IF(av) VR=400V Tj=125C 5 IF=0.25 x IF(av) 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 400 IF=0.5 x IF(av) 300 200 IF=2 x IF(av) dIF/dt(A/s) 100 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 3/6 STTH8L06D/FP Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 800 700 600 500 400 300 200 IF=0.5 x IF(av) VR=400V Tj=125C IF=2 x IF(av) Fig. 7: Softness factor versus dIF/dt (typical values). S factor 2.0 1.8 1.6 IF = IF(av) VR=400V Tj=125C IF=IF(av) 1.4 1.2 1.0 0.8 0.6 0.4 100 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 0.2 0.0 0 25 50 75 dIF/dt(A/s) 100 125 150 175 200 Fig. 8: Relative variations of dynamic parameters versus junction temperature. Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFp(V) 8 1.25 S factor 7 1.00 IF=IF(av) Tj=125C 6 IRM 0.75 QRR 5 4 0.50 3 0.25 2 Tj(C) 0.00 25 50 75 100 IF = IF(av) VR=400V Reference: Tj=125C 1 125 dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200 0 Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 300 IF=IF(av) VFR=1.1 x VF max. Tj=125C Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz Vosc=30mV Tj=25C 250 200 100 150 100 10 50 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 VR(V) 1 1 10 100 1000 4/6 STTH8L06D/FP PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. A H B Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 14.00 2.95 15.75 6.60 3.93 3.85 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 13.00 2.65 15.25 6.20 3.50 3.75 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 0.551 0.116 0.620 0.259 0.154 0.151 A C D E F F1 L7 Dia L6 L2 L3 L5 D F1 L4 G H2 L2 L4 L5 L6 L7 L9 M Diam. I 16.40 typ. 0.645 typ. F G1 G E 2.6 typ. 0.102 typ. 5/6 STTH8L06D/FP PACKAGE MECHANICAL DATA TO-220FPAC DIMENSIONS REF. A H B Millimeters Min. Max. 4.6 2.7 2.75 0.70 1 1.70 5.20 2.7 10.4 30.6 10.6 3.6 16.4 9.30 3.20 4.4 2.5 2.5 0.45 0.75 1.15 4.95 2.4 10 28.6 9.8 2.9 15.9 9.00 3.00 Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.195 0.094 0.393 1.126 0.386 0.114 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.205 0.106 0.409 1.205 0.417 0.142 0.646 0.366 0.126 A B D E F F1 L7 Dia L6 L2 L3 L5 D F1 L4 G G1 H L2 L3 L4 16 Typ. 0.63 Typ. F G1 G E L5 L6 L7 Dia. Ordering code STTH8L06D STTH8L06FP s s Marking STTH8L06D STTH8L06FP Package TO-220AC TO-220FPAC Weight 1.9 g 1.7 g Base qty 50 50 Delivery mode Tube Tube s Epoxy meets UL 94,V0 Recommended torque value (TO-220AC): 0.55 Nm Maximum torque value (TO-220AC / TO-220FPAC): 0.7 Nm Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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