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| LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon 3 COLLECTOR BSS64LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V V V CEO CBO EBO Value 80 120 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 4.0 mAdc ) Collector-Base Breakdown Voltage (I C = 100 Adc ) Emitter-Base Breakdown Voltage (I E = 100 Adc ) Collector Cutoff Current ( V CB = 90 Vdc ) ( T A = 150C ) Emitter Cutoff Current ( V EB = 4.0Vdc ) I EBO V (BR)CBO V (BR)EBO I CBO -- -- -- 0.1 500 200 nAdc 120 5.0 -- -- Vdc Vdc nAdc V (BR)CEO 80 -- Vdc 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. M40-1/2 LESHAN RADIO COMPANY, LTD. BSS64LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 1.0 Vdc) Collector-Emitter Saturation Voltage (I C = 4.0mAdc, I B = 0.4 mAdc) (I C = 50mAdc, I B = 15 mAdc) Forward Base-Emitter Voltage hFE VCE(sat) -- -- -- 0.15 0.2 -- 20 -- -- Vdc V BE(sat) -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 20 MHz) Output Capacitance (V CB = 10 Vdc, f = 1.0 MHz) fT C ob 60 -- -- 20 MHz pF M40-2/2 |
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