|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
FJAF6810D FJAF6810D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In) * High Collector-Base Breakdown Voltage : BVCBO = 1500V * High Switching Speed : tF(typ.) =0.1s * For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature 35 typ. E Rating 1500 750 6 10 20 60 150 -55 ~ 150 Units V V V A A W C C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1500V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A IF = 6A VCC=200V, IC=6A, RL=33 IB1=1.2A, IB2= - 2.4A 40 6 7 5 8 3 1.5 2 3 0.2 V V V s s Min Typ Max 1 10 250 Units mA A mA V * Pulse Test: PW=20s, duty Cycle=1% Pulsed Thermal Characteristics TC=25C unless otherwise noted Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 2.08 Units C/W (c)2001 Fairchild Semiconductor Corporation Rev. B, August 2001 FJAF6810D Typical Characteristics 10 100 IB=2.0A VCE = 5V IC [A], COLLECTOR CURRENT 8 hFE, DC CURRENT GAIN IB=1.0A 6 Ta = 25 C Ta = 125 C 10 o o IB=0.8A IB=0.6A IB=0.4A 4 IB=0.2A 2 Ta = - 25 C o 0 0 2 4 6 8 10 12 14 16 18 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 IC = 5 IB IC = 3 IB VCE(sat) [V], SATURATIOM VOLTAGE VCE(sat), SATURATION CURRENT 10 1 1 Ta = 125 C Ta = 25 C Ta = - 25 C 0.1 o o o Ta = 125 C Ta = 25 C Ta = - 25 C 0.1 1 10 o o o 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 20 18 10 IB1 = 1.2A, IC = 6A VCC = 200V IC [A], COLLECTOR CURRENT tF & tSTG [s], SWITCHING TIME 16 14 12 10 8 6 4 2 1 tSTG tF 0.1 Ta = 25 C o Ta = - 25 C Ta = 125 C 0 0.0 o o 0.01 0.3 0.6 0.9 1.2 1.5 1 10 VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time (c)2001 Fairchild Semiconductor Corporation Rev. B, August 2001 FJAF6810D Typical Characteristics (Continued) 10 10 tF & tSTG [s], SWITCHING TIME tSTG 1 tF & tSTG [s], SWITCHING TIME tSTG 1 tF tF 0.1 0.1 IB2 = -2.4A, IC = 6A VCC = 200V 0.01 1 10 IB1 = 1.2A, IB2 = -2.4A VCC = 200V 0.01 1 10 IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 30 25 RB2 = 0, IB1 = 15A VCC = 30V, L = 200H 100 IC [A], COLLECTOR CURRENT 20 IC (Pulse) t = 100ms t = 10ms IC [A], COLLECTOR CURRENT 15 10 IC (DC) t = 1ms 10 VBE(off) = -6V 5 1 VBE(off) = -3V 0 10 100 1000 10000 0.1 o VCE [V], COLLECTOR-EMITTER VOLTAGE TC = 25 C Single Pulse 0.01 1 10 100 1000 10000 Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area 80 70 PC [W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC [ C], CASE TEMPERATURE Figure 11. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. B, August 2001 FJAF6810D Package Demensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. B, August 2001 22.00 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H4 |
Price & Availability of FJAF6810D |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |