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 (R)
STBV32
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s
MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32 is designed for use in compact fluorescent lamp application. Ordering codes: STBV32 (shipment in bulk) STBV32-AP (shipment in ammopack)
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage o (I C = 0, IB = 0.5 A, tp < 10s, T j < 150 C) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 oC St orage Temperature Max. Operating Junction T emperature Value 700 400 BV EBO 1 3 0.5 1.5 1.1 -65 to 150 150 Uni t V V V A A A A W
o o
C C
August 2001
1/7
STBV32
THERMAL DATA
R thj-a Thermal Resistance Junction-ambient Max 112
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEV BV EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter-Base Breakdown Voltage (I C = 0) Test Cond ition s V CE = 700V V CE = 700V I E = 10 mA T j = 125 C 9
o
Min.
Typ .
Max. 1 5 18
Un it mA mA V
V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time
I C = 10 mA L = 25mH I C = 0.5 A IC = 1 A I C = 1.5 A I C = 0.5 A IC = 1 A I C = 0.5 A IC = 1 A IC = 1 A I B1 = 0.2 A T p = 25 s IC = 1 A V BE = -5 V V c la mp = 300 V I B = 0.1 A IB = 0.25 A I B = 0.5 A I B = 0.1 A IB = 0.25 A V CE = 2 V VCE = 2 V V CC = 125 V I B2 = -0.2 A I B1 = 0.2 A L = 50 mH
400
V
0.5 1 3 1 1.2 8 5 35 25 1 4 0.7 0.8
V V V V V
V BE(s at) h FE
tr ts tf ts
s s s s
Pulsed: Pulse duration = 300s, duty cycle = 1.5 %.
2/7
STBV32
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
STBV32
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
4/7
STBV32
Figure 1: Inductive Load Switching Test Circuits.
1) F ast electr onic switch 2) Non-inductive Resistor 3) F ast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) F ast electr onic switch 2) Non-inductive Resistor
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STBV32
TO-92 MECHANICAL DATA
mm DIM. MIN. TYP. MAX. MIN.
inch
TYP.
MAX.
A
4.58
5.33
0.180
0.210
B
4.45
5.2
0.175
0.204
C
3.2
4.2
0.126
0.165
D
12.7
0.500
E
1.27
0.050
F
0.4
0.51
0.016
0.020
G
0.35
0.14
6/7
STBV32
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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Price & Availability of STBV32
Newark

Part # Manufacturer Description Price BuyNow  Qty.
STBV32-AP
41Y5741
STMicroelectronics Board & Ref Design |Stmicroelectronics STBV32-AP BuyNow
0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
STBV32G-AP
497-12545-1-ND
STMicroelectronics TRANS NPN 400V 1.5A TO92AP 50000: USD0.18375
10000: USD0.19301
6000: USD0.20786
4000: USD0.21899
500: USD0.3014
100: USD0.386
10: USD0.555
1: USD0.65
BuyNow
842

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
STBV32AP
MFG UPON REQUEST RFQ
1120
STBV32G
STMicroelectronics RFQ
3246
STBV32G-AP
STMicroelectronics RFQ
953
STBV32-AP
STMicroelectronics RFQ
11200

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
STBV32-AP
STMicroelectronics STBV32-AP RFQ
0

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