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MITSUBISHI Nch POWER MOSFET FS16KM-10 HIGH-SPEED SWITCHING USE FS16KM-10 OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 123 2.6 0.2 w VDSS ................................................................................ 500V rDS (ON) (MAX) .............................................................. 0.56 ID .......................................................................................... 16A Viso ................................................................................ 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 500 30 16 48 40 -55 ~ +150 -55 ~ +150 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FS16KM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 30 -- -- 2 -- -- 6.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.43 3.44 8.0 1700 230 40 30 50 170 60 1.5 -- Max. -- -- 10 1 4 0.56 4.48 -- -- -- -- -- -- -- -- 2.0 3.13 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 8A, VGS = 10V, RGEN = RGS = 50 IS = 8A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) tw=10s 100s 1ms 10ms 40 30 101 7 5 3 2 100 7 5 3 2 20 10 0 0 50 100 150 200 TC = 25C Single Pulse 10-1 DC 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V 10V 6V PD = 40W TC = 25C Pulse Test 5.5V CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 40W DRAIN CURRENT ID (A) 20 TC = 25C Pulse Test DRAIN CURRENT ID (A) 40 VGS = 20V 30 10V 7V 6V 20 5V 16 12 8 5V 4 10 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS16KM-10 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 1.0 ID = 25A 16 TC = 25C Pulse Test 16A 8 8A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C Pulse Test 0.8 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () VGS = 10V 20V 12 0.6 0.4 4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 24 3 2 101 7 5 3 2 100 0 10 23 125C 75C 16 TC = 25C 8 0 0 4 8 12 16 20 5 7 101 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 103 7 5 Ciss SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 td(off) tf tr td(on) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 0 10 23 Coss 102 7 5 Crss 3 Tch = 25C 2 f = 1MHz VGS = 0V 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 5 7 101 23 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS16KM-10 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 TC = 125C VGS = 0V Pulse Test 75C 24 25C GATE-SOURCE VOLTAGE VGS (V) 16 VDS = 100V 12 200V 400V 8 SOURCE CURRENT IS (A) 80 100 Tch = 25C ID =16A 32 16 4 8 0 0 20 40 60 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 0.2 7 5 0.1 3 2 10-1 7 5 3 2 0.05 0.02 0.01 Single Pulse 1.0 0.8 PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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