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| MRF1946 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Amplifier Applications. PACKAGE STYLE .380" 4L FLG B .112 x 45 A FEATURES INCLUDE: * High Common Emitter Power Gain * Output Power = 30 W E B C D E C E O.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG JC 8.0 A 16 V 36 V 100 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.75 C/W DIM A B C D E F G H I J F G HI MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE Cob GPE IC = 25 mA IC = 25 mA IE = 5.0 mA VCE = 15 V IC = 1.0 A VCB = 15 V TC = 25 C TEST CONDITIONS VBE = 0 IB = 0 IC = 0 mA MINIMUM TYPICAL MAXIMUM 36 16 4.0 5.0 40 f = 1.0 MHz f = 175 MHz 12 60 75 75 150 100 UNITS V V V mA --pF DB % VBE = 0 VCE = 5.0 V IE = 0 mA Pout = 30 W VCC = 12.5 V VCC = 15.5 V PIN = 2.0 dB Overdrive No Degradation in Power Output Load VSWR = 30:1 ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. 0 1/1 |
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