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| Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.00.2 s Features q q q 0.70.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 50 40 15 100 50 300 150 -55 ~ +150 Unit V 1 2 3 1.27 1.27 V V mA mA mW C C 1:Emitter 2:Collector 3:Base 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = 10V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT 50 40 15 400 0.05 200 80 2000 0.2 V MHz mV min typ max 0.1 1 Unit A A V V V *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 2.00.2 marking +0.2 0.45-0.1 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. 3.00.2 1 Transistor PC -- Ta 500 120 Ta=25C 100 100 25C Ta=75C 80 -25C 2SD1424 IC -- VCE 120 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 80 IB=100A 90A 80A 70A 60A 50A 40A 30A 300 60 Collector current IC (mA) 400 60 200 40 40 100 20 20A 10A 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 IC/IB=10 1800 hFE -- IC 400 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30 100 350 300 250 200 150 100 50 1200 Ta=75C 900 25C -25C 600 Ta=75C 300 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 5 120 IE=0 f=1MHz Ta=25C NV -- IC VCE=10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) Noise voltage NV (mV) 4 100 80 Rg=100k 60 22k 40 5k 20 3 2 1 0 1 3 10 30 100 0 0.01 0.03 0.1 0.3 1 Collector to base voltage VCB (V) Collector current IC (mA) 2 |
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