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| 2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 9 GHz typ * High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline 2SC5218 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is "YK-". Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 150 150 -55 to +150 Unit V V V mA mW C C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min 15 -- -- -- 50 -- 6.0 10 -- Typ -- -- -- -- 120 0.8 9.0 13 1.2 Max -- 1 1 10 250 1.4 -- -- 2.5 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC5218 3 2SC5218 4 2SC5218 5 2SC5218 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.817 0.701 0.602 0.536 0.495 0.468 0.447 0.434 0.423 0.428 ANG. -34.7 -64.5 -88.3 -106 -120 -132 -141 -150 -157 -164 S21 MAG. 14.1 11.6 9.32 7.61 6.40 5.50 4.80 4.27 3.83 3.50 ANG. 156 136 122 112 105 99.5 94.9 90.9 87.2 83.9 S12 MAG. 0.034 0.058 0.073 0.083 0.091 0.097 0.104 0.110 0.117 0.124 ANG. 72.3 59.8 52.9 49.8 48.9 49.3 50.0 50.9 52.1 53.3 S22 MAG. 0.916 0.761 0.620 0.520 0.447 0.396 0.357 0.327 0.305 0.287 ANG. -19.8 -34.8 -43.9 -49.3 -52.5 -54.5 -55.7 -56.5 -57.5 -58.4 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 ) Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.529 0.427 0.386 0.370 0.366 0.367 0.364 0.360 0.362 0.364 ANG. -70.4 -111 -134 -150 -159 -167 -174 -179 176 171 S21 MAG. 29.9 19.0 13.4 10.2 8.28 6.96 6.01 5.28 4.71 4.27 ANG. 136 115 104 98.0 93.7 89.7 87.0 84.2 81.7 79.3 S12 MAG. 0.025 0.038 0.048 0.058 0.069 0.080 0.091 0.102 0.115 0.126 ANG. 64.9 60.3 61.8 64.3 66.6 67.8 68.7 69.5 69.4 69.6 S22 MAG. 0.716 0.462 0.330 0.260 0.214 0.184 0.162 0.146 0.133 0.123 ANG. -39.8 -56.6 -63.2 -66.2 -67.8 -68.8 -69.1 -69.7 -70.4 -71.5 6 2SC5218 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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