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| BAS86 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications Applications where a very low forward voltage is required 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Junction temperature Storage temperature range Test Conditions tp=10 ms tp1s Type Symbol VR IFSM IFRM IF IFAV Tj Tstg Value 50 5 500 200 200 125 -65...+150 Unit V A mA mA mA C C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 320 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=40V VR=1V, f=1MHz Type Symbol VF VF VF VF VF IR CD Min Typ Max 300 380 450 600 900 5 8 Unit mV mV mV mV mV Reverse current Diode capacitance mA pF Document Number 85511 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BAS86 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 500 PR - Reverse Power Dissipation ( mW ) 450 400 350 300 250 200 150 100 50 0 25 15827 1000 VR = 50 V IF - Forward Current ( A ) Tj = 150C 100 Tj = 25C 10 PR-Limit @100%VR RthJA= 540K/W 1 PR-Limit @80%VR 0.1 50 75 100 125 150 15829 0 0.5 1.0 1.5 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 10000 VR = VRRM Figure 3. Forward Current vs. Forward Voltage 10 9 CD - Diode Capacitance ( pF ) 8 7 6 5 4 3 2 1 0 0.1 15830 f=1MHz I R - Reverse Current ( mA ) 1000 100 10 1 25 15828 50 75 100 125 150 1.0 10.0 100.0 Tj - Junction Temperature ( C ) VR - Reverse Voltage ( V ) Figure 2. Reverse Current vs. Junction Temperature Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 85511 Rev. 3, 01-Apr-99 BAS86 Vishay Telefunken Dimensions in mm 96 12070 Document Number 85511 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BAS86 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 85511 Rev. 3, 01-Apr-99 |
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