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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF420; BF422 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES * Low feedback capacitance. APPLICATIONS * Class-B video output stages in colour television and professional monitor equipment. DESCRIPTION NPN transistors in a TO-92 plastic package. PNP complements: BF421 and BF423. 1 handbook, halfpage 2 3 BF420; BF422 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 1 3 MAM259 Fig.1 Simplified outline (TO-92) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF420 BF422 VCEO collector-emitter voltage BF420 BF422 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tamb 25 C IC = 25 mA; VCE = 20 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz open base - - - - 50 - 60 300 250 100 830 - 1.6 - pF MHz V V mA mW open emitter - - 300 250 V V CONDITIONS MIN. MAX. UNIT 1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF420 BF422 VCEO collector-emitter voltage BF420 BF422 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on a printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on a printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 C IEBO hFE VCEsat Cre fT emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz CONDITIONS PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BF420; BF422 MIN. - - - - - - - - - -65 - -65 MAX. 300 250 300 250 5 50 100 50 830 +150 150 +150 UNIT V V V V V mA mA mA mW C C C VALUE 150 UNIT K/W MIN. - - - 50 - - 60 MAX. 10 10 50 - 0.6 1.6 - UNIT nA A nA V pF MHz 1996 Dec 09 3 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE BF420; BF422 andbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 1 4.8 max 2.54 2 3 0.66 0.56 5.2 max 12.7 min 0.48 0.40 2.0 max (1) MBC014 - 1 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-92. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Dec 09 4 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF420; BF422 1996 Dec 09 5 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF420; BF422 1996 Dec 09 6 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF420; BF422 1996 Dec 09 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 247 9145, Fax. +7 095 247 9144 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996 Internet: http://www.semiconductors.philips.com SCA52 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117041/00/02/pp8 Date of release: 1996 Dec 09 Document order number: 9397 750 01563 |
Price & Availability of BF422
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