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| SFH 216 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 216 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 350 nm bis 1100 nm q Kurze Schaltzeit (typ. 5 ns) q Hermetisch dichte Metallbauform (TO-18) Anwendungen q Schneller optischer Empfanger mit groer 350 nm to 1100 nm q Short switching time (typ. 5 ns) q Hermetically sealed metal package (TO-18) Applications q Optical sensor of high modulation bandwidth Modulationsbandbreite fur Lichtgriffel for light pens Typ Type SFH 216 Bestellnummer Ordering Code Q62702-P936 Semiconductor Group 410 10.95 feo06314 SFH 216 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 125 230 Einheit Unit C C Top; Tstg TS VR Ptot 50 250 V mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 50 ( 35) 850 350 ... 1150 Einheit Unit nA/Ix nm nm S S max S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 20 V Dark current A LxB LxW H 1 1x1 mm2 mm 4.2 ... 5.0 mm 12 1 ( 5) Grad deg. nA IR Semiconductor Group 411 SFH 216 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Symbol Symbol Wert Value 0.55 0.80 410 ( 350) 50 5 Einheit Unit A/W Electrons Photon mV A ns S VO ISC tr, tf Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 20 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 20 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit VF C0 TCV TCI NEP 1.3 11 - 2.6 0.2 3.3 x 10-14 V pF mV/K %/K W Hz cm * Hz W D* 3.1 x 1012 Semiconductor Group 412 SFH 216 Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage VO = f (Ev) Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 1 V, E = 0 Directional characteristics Srel = f () Semiconductor Group 413 |
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