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AP28G45EM Advanced Power Electronics Corp. High Input Impedance High Pick Current Capability 3.3V Gate Drive Strobe Flash Applications C C C C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCE ICP 450V 130A C G E G E SO-8 E E Absolute Maximum Ratings Symbol VCE VGE IGEP ICP PD@TC=25 TSTG TJ 1 Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 450 6 8 130 2.5 -55 to 150 -55 to 150 Units V V V A W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Cres RthJA 1 Parameter Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Test Conditions VGE= 6V, VCE=0V VGE=3.3V, ICP=130A (Pulsed) Min. - Typ. 3.8 74 8 34 20 100 400 3 3020 220 50 - Max. 10 10 6 1 120 4830 50 Units uA uA V V nC nC nC ns ns ns s pF pF pF /W Collector-Emitter Leakage Current VCE=450V, VGE=0V Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=VGE, IC=250uA IC=40A VCE=360V VGE=4.5V VCC=200V IC=15A RG=10 VGE=5V VGE=0V VCE=25V f=1.0MHz Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125/W when mounted on Min. copper pad. Data and specifications subject to change without notice 201117031 AP28G45EM 240 140 200 T A =25 C o 5.0V 4.0V IC , Collector Current (A) 120 T A = 150 C o 5.0V 4.0V 3.3 V IC , Collector Current (A) 100 160 3.3V 120 80 60 2.0V 80 2.0V 40 40 V G =1.0V 20 V G =1.0V 0 0 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 V CE , Collector-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 240 9 200 V CE =6.0V 25 C o V GE =4.0V VCE(sat) ,Saturation Voltage(V) 7 IC , Collector Current(A) 160 70 o C 125 o C T A =150 o C I C =130A I C =120A 5 120 I C =100A 80 3 I C =50A 40 0 1 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 V GE , Gate-Emitter Voltage (V) Junction Temperature ( C) o Fig 3. Collector Current v.s. Gate-Emitter Voltage 1.2 Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature 10 VGE(th) ,Gate Threshold Voltage (V) 1.0 VCE ,Collector-Emitter Voltage(V) o T A =25 C 8 0.8 6 I C = 130 A 120A 100A 50A 0.6 4 0.4 2 0.2 0.0 -50 0 50 100 150 0 0 1 2 3 4 5 6 Junction Temperature ( o C ) V GE , Gate-Emitter Voltage(V) Fig 5. Gate Threshold Voltage v.s. Junction Temperature Fig 6. Collector Current v.s. Gate-Emitter Voltage AP28G45EM f=1.0MHz 10000 160 T A =25 C ICP , Peak Collector Current (A) Cies 1000 120 o C (pF) 80 Coes 100 Cres 40 10 1 5 9 13 17 21 25 29 0 0 2 4 6 8 V CE , Collector-Emitter Voltage (V)) V GE , Gate-to-Emitter Voltage (V) Fig 7. Typical Capacitance Characterisitics Fig 8. Maximum Pulse Collector Current VCE RC TO THE OSCILLOSCOPE 90% C VCE RG G VCC=200 V E + 10% VGE VGE - 5V td(on) tr td(off) tf Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform 12 TO THE C G OSCILLOSCOPE VGE , Gate -Emitter Voltage (V) VCE 10 I CP =40A V CE =360V 8 VCC=360V VGE + 6 E 4 1~3mA - IG IC 2 0 0 40 80 120 160 200 Q G , Gate Charge (nC) Fig 11. Gate Charge Test Circuit Fig 12. Gate Charge Waveform |
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