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PD - 9.1538B
IRL6903
HEXFET(R) Power MOSFET
Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l
D
VDSS = -30V
G S
RDS(on) = 0.011 ID = -105A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-105 -74 -360 200 1.3 16 1000 -55 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.75 --- 62
Units
C/W
10/7/97
IRL6903
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. -30 --- --- --- -1.0 36 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.028 --- V/C Reference to 25C, ID = -1mA --- 0.011 VGS = -10V, ID = -55A --- 0.02 VGS = -4.5V, ID = -46A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -25V, ID = -65A --- -25 VDS = -30V, VGS = 0V A --- -250 VDS = -24V, VGS = 0V, TJ = 150C --- 100 VGS = -16V nA --- -100 VGS = 16V --- 100 ID = -55A --- 44 nC VDS = -24V --- 55 VGS = -4.5V, See Fig. 6 and 13 16 --- VDD = -15V 130 --- ID = -55A ns 88 --- RG = 2.5, VGS = -4.5V 150 --- RD = 0.26, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 4400 --- VGS = 0V 2000 --- pF VDS = -25V 590 --- = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- -105 showing the A G integral reverse --- --- -360 p-n junction diode. S --- --- -1.3 V TJ = 25C, IS = -55A, VGS = 0V --- 82 120 ns TJ = 25C, IF = -55A --- 170 260 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4
Starting TJ = 25C, L = 0.66mH
RG = 25, IAS = -55A. (See Figure 12)
ISD -55A, di/dt -130A/s, VDD V(BR)DSS ,
TJ 175C
IRL6903
1000
VGS -15V -12V -10V -8.0V -6.0V -4.0V -3.0V BOTTOM -2.5V TOP
1000
-I D, Drain-to-Source Current (A)
100
10
-I D, Drain-to-Source Current (A)
VGS -15V -12V -10V -8.0V -6.0V -4.0V -3.0V BOTTOM -2.5V TOP
100
10
1
-2.5V
0.1 0.1 1
20s PULSE WIDTH TJ = 25 C
10 100
-2.5V
1 0.1 1
20s PULSE WIDTH TJ = 175 C
10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
ID = -91A
-I D , Drain-to-Source Current (A)
TJ = 25 C
100
TJ = 175 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
1.5
10
1.0
1
0.5
0.1 2 3 4 5 6
V DS = -25V 20s PULSE WIDTH 7 8 9 10
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V)
T J, Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL6903
8000
-V GS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss
15
ID = -55A VDS = -24V VDS = -15V
12
C, Capacitance (pF)
6000
9
4000
Coss
6
2000
3
Crss
0 1 10 100
0 0 50 100 150
FOR TEST CIRCUIT SEE FIGURE 13
200 250 300
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) -I D , Drain Current (A) I
100
TJ = 175 C
100us
10
100
TJ = 25 C
1
1ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
10 1
TC = 25 C TJ = 175 C Single Pulse
10
10ms 100
-VSD ,Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL6903
120
LIMITED BY PACKAGE
105
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
90 75
-4.5V
60 45
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
30 15
VGS
td(on) tr t d(off) tf
0 25 50 75 100 125 150 175
10%
TC , Case Temperature
( C)
90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50
0.20
Thermal Response
0.1
0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
VDD
IRL6903
VDS L
3000
RG
D .U .T IA S D R IV E R
0 .0 1
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
2500
VD D A
ID -22A -39A -55A
-10 20V tp
2000
1500
15V
1000
Fig 12a. Unclamped Inductive Test Circuit
I AS
500
0 25 50 75 100 125 150 175
Starting T J, Junction Temperature
( C)
tp V(BR)DSS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
QGS
QGD
D.U.T.
-
-4.5V
VDS
IRL6903
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[ VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRL6903
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) -A6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 )
4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN
1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 )
4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 )
3X
1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 )
0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M BA M
3X
0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 )
2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H
2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB E X AM : E X AM PLEPLET:HI T HI S A N AIRF 1010 S IS IS N IRF 1010 W A S A S S E MB W IT H IT H S E MB LY LY LO T CO 9B 9B LO T CO DE DE 1M 1M
A A
IN TE R NA T A L IN TE R NA T IONION A L R EC T IF R EC T IF IER IER IR F IR F 1010 1010 LO LO GO GO 9246 9246 9B 9B1M 1M A S S EM B A S S EM B LY LY LO CO CO LO T T DE DE
P A NU NU M BE P A RT RT M BE R R
D A C C OD D A TE TEOD E E (Y W ) (Y YW YW W ) Y Y Y Y YE A R A R = = YE W = W EW E EK W W W = EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 10/97

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