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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) Fall time CONDITIONS VBE = 0 V TYP. 7 6 285 170 MAX. 1500 800 10 25 45 3.0 400 230 UNIT V V A A W V A A ns ns Ths 25 C IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz ICsat = 7 A; f = 16 kHz ICsat = 6 A; f = 64 kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 10 25 6 9 6 45 150 150 UNIT V V A A A A A W C C Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W 1 Turn-off current. December 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 7 A; IB = 1.75 A IC = 7 A; IB = 1.75 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 5 V MIN. 7.5 800 0.85 4.2 TYP. 13.5 0.94 10 5.8 MAX. 1.0 2.0 1.0 3.0 1.03 7.3 UNIT mA mA mA V V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (64 kHz line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS f = 16 kHz; ICsat = 7 A; IB1 = 1.4 A; (IB2 = -3.5 A) TYP. MAX. UNIT s ns s ns ts tf 3.5 285 4.3 400 ts tf f = 64 kHz; ICsat = 6 A; IB1 = 1.2 A; (IB2 = -3.6 A) 2.3 170 2.7 230 2 Measured with half sine-wave voltage (curve tracer). December 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF + 50v 100-200R TRANSISTOR IC DIODE ICsat t Horizontal Oscilloscope Vertical IB IB1 t 5 us 6.5 us 16 us IB2 100R 6V 30-60 Hz 1R VCE t Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (64 kHz). IC / mA ICsat 90 % IC 250 10 % 200 ts IB tf t 100 IB1 t 0 VCE / V min VCEOsust - IB2 Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times definitions. TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB IB1 t 20us 26us 64us VCE IB2 IBend LB T.U.T. Cfb -VBB t Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit. December 1997 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF 100 hFE VCE = 1 V BU4522AF/X Ths = 25 C Ths = 85 C VBEsat \ V 1.3 1.2 1.1 IC = 7 A Ths = 25 C Ths = 85 C 1 10 0.9 0.8 0.7 1 0.01 IC = 6 A 0.1 1 10 IC / A 100 0.6 0 1 2 3 IB / A 4 Fig.7. High and low DC current gain. Fig.10. Typical base-emitter saturation voltage. BU4522AF/X 100 VCE = 5 V Ths = 25 C Ths = 85 C 5 ts/tf/ us BU4522AF/X 16kHz 4 ICsat = 7 A Ths = 85 C Freq = 16 kHz 3 hFE 10 2 1 1 0.01 0 0.1 IC / A1 10 100 0 0.5 1 1.5 IBend / A 2 Fig.8. High and low DC current gain. Fig.11. Typical collector storage and fall time. IC =7 A; Tj = 85C; f = 16kHz ts/tf/ us 5 10 VCEsat (V) Ths = 25 C Ths = 85 C BU4522AF/X BU4522AF/X 64kHz 4 ICsat = 6 A Ths = 85 C Freq = 64 kHz 1 3 0.1 IC/IB = 5 2 1 0.01 0.1 1 10 IC / A 100 0 0 0.5 1 1.5 IB / A 2 Fig.9. Typical collector-emitter saturation voltage. Fig.12. Typical collector storage and fall time. IC = 6 A; Tj = 85C; f = 64 kHz December 1997 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound IC / A 30 BU2522AF 20 10 0 20 40 60 80 Ths / C 100 120 140 0 0 500 VCE / V 1000 1500 Fig.13. Normalised power dissipation. PD% = 100PD/PD 25C Zth / (K/W) 10 Fig.16. Reverse bias safe operating area. Tj Tjmax BU4522AF 10 9 Ic(sat) (A) 0.5 1 0.2 0.1 0.05 0.1 0.02 8 7 6 5 4 0.01 P D tp D= tp T t 1.0E-01 3 2 1 0 0 10 20 40 50 60 70 30 Horizontal frequency (kHz) 80 90 100 0 0.001 1.0E-07 1.0E-05 1.0E-03 T 1.0E-01 t/s Fig.14. Transient thermal impedance. Fig.17. ICsat during normal running vs. frequency of operation for optimum performance VCC LC IBend VCL LB T.U.T. CFB -VBB Fig.15. Test Circuit RBSOA. December 1997 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.18. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1997 6 Rev 1.000 |
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