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Datasheet File OCR Text: |
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2002.10.25 Page No. : 1/3 HMBD914 HIGH-SPEED SWITCHING DIODE Description The HMBD914 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The device is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package. SOT-23 Features * Small SMD Package (SOT-23) * Ultra-high Speed * Low Forward Voltage * Fast Reverse Recovery Time Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ........................................................................................................ -65 ~ +150 C Junction Temperature ................................................................................................................ +150 C * Maximum Power Dissipation Total Power Dissipation (Ta=25C)............................................................................................. 250 mW * Maximum Voltages and Currents (Ta=25C) Repetitive Peak Reverse Voltage.................................................................................................... 85 V VR Coinuous Reverse Voltage........................................................................................................ 70 V IF Continuous Forward Current................................................................................................... 200 mA IFSM Peak Forward Surge Current............................................................................................. 500 mA IFSM Non-Repetitive Peak Forward Current t=1uS ........................................................................... 4 A IFSM Non-Repetitive Peak Forward Current t=1mS .......................................................................... 1 A IFSM Non-Repetitive Peak Forward Current t=1S .......................................................................... 0.5 A Characteristics (Ta=25C) Characteristic Forward Voltage Reverse Breakdown Voltage Reverse Current Diode Capacitance Reverse Recovery Time Symbol VF VR IR(1) IR(2) Cd Trr Condition IF=10mA IR=100uA VR=25V VR=75V VR=0, F=1MHz IF=IR=10mA, RL=100 Measured at IR=1mA Min 100 Max 1 25 5 1.5 4 Unit V V nA uA pF ns HMBD914 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Forward Biased Voltage & Forward Current 450 Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2002.10.25 Page No. : 2/3 Capacitance & Reverse-Biased Voltage 1 Current-IF (mA) 300 150 0 0 500 1000 1500 2000 Capacitance-Cd (pF) 0.1 0.1 1 10 100 Forward Biased Voltage-VF (mV) Reverse-Biased Voltage-VR (V) HMBD914 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Diagram: L Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2002.10.25 Page No. : 3/3 A Marking: 3 BS 1 V G 2 5D Rank Code Control Code 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N C D H K J Style: Pin 1.Anode 2.NC 3.Cathode *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBD914 HSMC Product Specification |
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