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 BSP 299
SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Avalanche rated * VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type BSP 299 Type BSP 299
VDS
500 V
ID
0.4 A
RDS(on)
4
Package SOT-223
Marking BSP 299
Ordering Code Q67000-S225
Tape and Reel Information E6327
Maximum Ratings Parameter Continuous drain current Symbol Values 0.4 Unit A
ID IDpuls
1.6
TA = 44 C
DC drain current, pulsed
TA = 25 C
Avalanche energy, single pulse
EAS
130
mJ
ID = 1.2 A, VDD = 50 V, RGS = 25 L = 163 mH, Tj = 25 C
Gate source voltage Power dissipation
VGS Ptot
20 1.8
V W
TA = 25 C
Semiconductor Group
1
Sep-12-1996
BSP 299
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 70 10 E 55 / 150 / 56 K/W Unit C
Tj Tstg RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
500 3 0.1 10 10 3.5 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 0 C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
A
VDS = 500 V, VGS = 0 V, Tj = 25 C VDS = 500 V, VGS = 0 V, Tj = 125 C
Gate-source leakage current
IGSS
100
nA 4
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.4 A
Semiconductor Group
2
Sep-12-1996
BSP 299
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.3 1.2 300 40 15 -
S pF 400 60 25 ns 8 12
VDS 2 * ID * RDS(on)max, ID = 0.4 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50
Rise time
tr
15 22
VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50
Turn-off delay time
td(off)
55 70
VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50
Fall time
tf
30 40
VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50
Semiconductor Group
3
Sep-12-1996
BSP 299
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current,pulsed A 0.9 300 2.5 0.4 1.6 V 1.2 ns C Values typ. max. Unit
ISM VSD trr Qrr
TA = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 0.8 A, Tj = 25 C
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/s
Semiconductor Group
4
Sep-12-1996
BSP 299
Power dissipation Ptot = (TA)
Drain current ID = (TA) parameter: VGS 10 V
0.45 A
2.0 W
Ptot
1.6 1.4
ID
0.35 0.30
1.2 0.25 1.0 0.20 0.8 0.15 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 0.10 0.05 0.00 0 20 40 60 80 100 120 C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0, TC=25C
Transient thermal impedance Zth JA = (tp) parameter: D = tp / T
10 2 K/W 10 1
ZthJC
10 0
10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01
10 -2
10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10
tp
Semiconductor Group
5
Sep-12-1996
BSP 299
Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C
0.9 A
VGS [V]
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
13
Ptot = 2W k i f d
l c
j h g e
b
11
a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
a
ID
0.7 0.6 0.5 0.4 0.3 0.2 0.1
a
RDS (on)
10 9 8 7 6 5 4
l j h ic e d fg k b
d e f g h i j k l
3 2 1
VGS [V] =
a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0
0.0 0 2 4 6 8 10 12 V 16
0 0.00 0.10 0.20 0.30 0.40 A 0.60
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s,
2.6 A 2.2
2.6 S 2.2
ID
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V 10
gfs
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.4 0.8 1.2 1.6 A ID 2.2
VGS
Semiconductor Group
6
Sep-12-1996
BSP 299
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.4 A, VGS = 10 V
10
Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
RDS (on)
8 7 6 5 4 3
98%
VGS(th)
3.6 3.2 2.8
typ
98% typ
2.4 2.0 1.6 1.2
2%
2 1 0 -60 -20 20 60 100 C 160
0.8 0.4 0.0 -60 -20 20 60 100 C 160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 1
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 1
nF C 10 0
A
IF
10 0
Ciss
10 -1
10 -1
Tj = 25 C typ Coss Tj = 150 C typ Tj = 25 C (98%) Crss
10 -2 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8
Tj = 150 C (98%)
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
Sep-12-1996
BSP 299
Avalanche energy EAS = (Tj ) parameter: ID = 1.2 A, VDD = 50 V RGS = 25 , L = 163 mH
140 mJ 120
Drain-source breakdown voltage V(BR)DSS = (Tj)
600 V 580 570 V(BR)DSS 560 550 540 530
EAS
110 100 90 80 70
520 60 50 40 30 20 10 0 20 40 60 80 100 120 C 160 510 500 490 480 470 460 450 -60 -20 20 60 100 C 160
Tj
Tj
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C
Semiconductor Group
8
Sep-12-1996
BSP 299
Package outlines SOT-223 Dimensions in mm
Semiconductor Group
9
Sep-12-1996


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