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 KSB834W
KSB834W
Low Frequency Power Amplifier
* Complement to KSD880W
1
D2-PAK 3.Emitter
1.Base 2.Collector
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value - 60 - 60 -7 -3 - 0.5 30 1.5 150 - 55 ~ 150 Units V V V A A W W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICBO IEBO BVCEO hFE1 hFE2 VCE(sat) VBE (on) fT Cob tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 IC = - 50mA, IB = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30 - 60 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 200 -1 -1 V V MHz pF s s s Min. Typ. Max. - 100 - 100 Units A A V
hFE Classification
Classification hFE1 O 60 ~ 120 Y 100 ~ 200
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSB834W
Package Demensions
D2-PAK
(0.40)
9.90
0.20
4.50
0.20
1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10
0.15
2.40
0.20
4.90 0.20
(0.75)
1.27
0.10
0.80
0.10
0
~3
+0.10
2.54 TYP
2.54 TYP 10.00 0.20 (8.00) (4.40)
0.50 -0.05
10.00
0.20
(1.75)
(7.20)
0.80
0.10
15.30 0.30
(2XR0.45)
4.90 0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
9.20 0.20
2.54 0.30
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3


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Price & Availability of KSB834W
Newark

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
82C7192
onsemi Transistor, bjt, pnp,60V V(Br)Ceo,3A I(C) Rohs Compliant: Yes |Onsemi KSB834WYTM 30000: USD0.309
18000: USD0.316
12000: USD0.329
6000: USD0.365
3000: USD0.402
1: USD0.419
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0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
KSB834WYTMCT-ND
onsemi TRANS PNP 60V 3A D2PAK 20000: USD0.30691
5600: USD0.33147
2400: USD0.34988
1600: USD0.39285
800: USD0.4616
100: USD0.5524
10: USD0.798
1: USD0.92
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Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
KSB834WYTM
onsemi Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: KSB834WYTM) 240000: USD0.30144
120000: USD0.31117
24000: USD0.32089
12000: USD0.33062
6400: USD0.34034
4000: USD0.35006
2400: USD0.35979
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Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
512-KSB834WYTM
onsemi Bipolar Transistors - BJT PNP Epitaxial Sil 1: USD0.92
10: USD0.798
100: USD0.553
800: USD0.392
2400: USD0.349
4800: USD0.348
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Rochester Electronics

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
Fairchild Semiconductor Corporation KSB834W - Power Bipolar Transistor, 3A, 60V, PNP, TO-263AB, Plastic/Epoxy, 2 Pin 1000: USD0.3481
500: USD0.3685
100: USD0.3849
25: USD0.4013
1: USD0.4095
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573
KSB834WYTM
onsemi KSB834W - Power Bipolar Transistor, 3A, 60V, PNP, TO-263AB, Plastic/Epoxy, 2 Pin 1000: USD0.3481
500: USD0.3685
100: USD0.3849
25: USD0.4013
1: USD0.4095
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526

TME

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
KSB834WYTM
onsemi Transistor: PNP; bipolar; 60V; 3A; 1.5W; D2PAK 800: USD0.416
400: USD0.447
100: USD0.479
25: USD0.536
5: USD0.606
1: USD0.73
RFQ
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Sensible Micro Corporation

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM OR EQUIVALENT
SMC-KSB834WYTM OR EQUIVALENT
Fairchild Semiconductor Corporation AS6081 Certified Vendor, 1 Yr Warranty RFQ
11351

EBV Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
KSB834WYTM
onsemi Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) D2PAK T/R (Alt: KSB834WYTM) BuyNow
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Flip Electronics

Part # Manufacturer Description Price BuyNow  Qty.
KSB834WYTM
onsemi Stock, ship today 1: USD0.24
RFQ
380

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