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Datasheet File OCR Text:

PD- 92004
SMPS MOSFET
IRF740A
HEXFET(R) Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching
l
VDSS
400V
Rds(on) max
0.55
ID
10A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001)
l
TO-220AB
GDS
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
10 6.3 40 125 1.0 30 5.9 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies:
l l
Single transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset ( Both for US Line Input only )
through are on page 8
Notes
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1
9/14/99
IRF740A
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 400 --- --- 2.0 --- --- --- --- Typ. --- 0.48 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 0.55 VGS = 10V, ID = 6.0A 4.0 V VDS = VGS, ID = 250A 25 VDS = 400V, VGS = 0V A 250 VDS = 320V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 4.9 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 10 35 24 22 1030 170 7.7 1490 52 61 Max. Units Conditions --- S VDS = 50V, ID = 6.0A 36 ID = 10A 9.9 nC VDS = 320V 16 VGS = 10V, See Fig. 6 and 13 --- VDD = 200V --- ID = 10A ns --- RG = 10 --- RD = 19.5,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 320V, = 1.0MHz --- VGS = 0V, VDS = 0V to 320V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
630 10 12.5
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- 0.50 ---
Max.
1.0 --- 62
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol 10 --- --- showing the A G integral reverse --- --- 40 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 10A, VGS = 0V --- 240 360 ns TJ = 25C, IF = 10A --- 1.9 2.9 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF740A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
1
0.1
4.5V
4.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
0.01 0.1
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 10A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
10
2.0
TJ = 150 C
1.5
1
1.0
TJ = 25 C
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.5
0.1 4.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF740A
20
100000
ID = 10A VDS = 320V VDS = 200V VDS = 80V
VGS , Gate-to-Source Voltage (V)
10000
VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + C ds gd
16
C, Capacitance(pF)
1000
Ciss
12
100
Coss
8
10
Crss
4
1 1 10 100 1000
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40
VDS, Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10us
10
I D , Drain Current (A)
TJ = 150 C TJ = 25 C
1
100us 10
1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF740A
10.0
VDS VGS
RD
8.0
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
6.0
10V
Pulse Width 1 s Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF740A
1 5V
1400
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
1200
VDS
L
D R IV E R
ID 4.5A 6.3A 10A
1000
RG
20V tp
D .U .T
IA S
+ V - DD
800
A
0 .0 1
600
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V DSav , Avalanche Voltage ( V )
580
560
Charge
540
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
520
50K 12V .2F .3F
500
D.U.T. VGS
3mA
+ V - DS
480 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
IAV , Avalanche Current ( A)
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRF740A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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7
IRF740A
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A 6.47 (.255) 6.10 (.240) -B 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LE AD A S SIG NME NT S 1 - GA TE 2 - DR A IN 3 - S OU RCE 4 - DR A IN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X N OT ES : 1 DIMEN S IONING & T OLE R AN CIN G PE R A NS I Y14.5M, 1982. 2 CO NT RO LLING D IMEN S ION : IN CH
2.92 (.115) 2.64 (.104)
3 OUT LINE C ONF O RMS T O JED EC O UT LIN E TO -220A B. 4 HE A TS IN K & LE A D ME AS UR E MEN TS D O NO T INC LU DE B U RRS .
Part Marking Information
TO-220AB
E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT CO DE 9B1M
A
IN T E R N A T IO N A L R E C T IF IE R LO GO ASS EM BLY LOT CODE
P ART NUM BER IR F 1 0 1 0 9246 9B 1M
D ATE COD E (Y Y W W ) Y Y = YE A R W W = W EEK
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 12.6mH
RG = 25, IAS = 10A. (See Figure 12)
ISD 10A, di/dt 330A/s, VDD V(BR)DSS,
TJ 150C
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/99
8
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Price & Availability of IRF740A

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740APBF 38K2845	Vishay Intertechnologies	Mosfet Transistor, N Channel, 10 A, 400 V, 550 Mohm, 10 V, 4 V Rohs Compliant: Yes \|Vishay IRF740APBF	500: USD1.28 100: USD1.66 50: USD1.73 25: USD1.81 10: USD1.88 1: USD2.45	2634
IRF740ALPBF 63J7387	Vishay Intertechnologies	N Channel Mosfet, 400V, 10A, I2-Pak; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes \|Vishay IRF740ALPBF	500: USD1.4	0
IRF740ASPBF 38K2846	Vishay Intertechnologies	Mosfet, N-Ch, 400V, 10A, 150Deg C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes \|Vishay IRF740ASPBF	500: USD1.39 100: USD1.5 50: USD1.58 25: USD1.65 10: USD1.73 1: USD2.42	0
IRF740ASPBF. 29AC7078	Vishay Intertechnologies	Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:125W; No. Of Pins:3Pins Rohs Compliant: No \|Vishay IRF740ASPBF.	500: USD1.44	0
IRF740APBF-BE3 78AH6380	Vishay Intertechnologies	Mosfet, N-Ch, 400V, 10A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes \|Vishay IRF740APBF-BE3	2500: USD1.24 1000: USD1.38	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740APBF-BE3 742-IRF740APBF-BE3-ND	Vishay Siliconix	MOSFET N-CH 400V 10A TO220AB	500: USD1.12376 100: USD1.2447 50: USD1.5128 1: USD1.88	1623
IRF740ALPBF IRF740ALPBF-ND	Vishay Siliconix	MOSFET N-CH 400V 10A I2PAK	500: USD1.24876 100: USD1.3831 50: USD1.681 1: USD2.09	865
IRF740ASPBF IRF740ASPBF-ND	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK	5000: USD1.08362 2000: USD1.12596 1000: USD1.18521 500: USD1.39686 100: USD1.6508 50: USD2.0064 1: USD2.5	830
IRF740APBF IRF740APBF-ND	Vishay Siliconix	MOSFET N-CH 400V 10A TO220AB	5000: USD1.16223 2000: USD1.20763 1000: USD1.27119 500: USD1.49818 100: USD1.7706 50: USD2.152 1: USD2.68	744
IRF740ASTRLPBF IRF740ASTRLPBFCT-ND	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK	5600: USD1.29151 2400: USD1.34196 1600: USD1.41259 800: USD1.66484 100: USD1.9675 10: USD2.472 1: USD2.98	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740A IRF740A	Vishay Intertechnologies	MOSFET N-CHANNEL 400V - Tape and Reel (Alt: IRF740A)		0
IRF740A IRF740A	Vishay Intertechnologies	MOSFET N-CHANNEL 400V - Bulk (Alt: IRF740A)		0
IRF740ASPBF IRF740ASPBF	Vishay Intertechnologies	MOSFET N-CHANNEL 400V - Bulk (Alt: IRF740ASPBF)	100000: USD1.02965 10000: USD1.08303 8000: USD1.13642 6000: USD1.18219 4000: USD1.22413 2000: USD1.26608 1000: USD1.30803	0
IRF740ASTRRPBF IRF740ASTRRPBF	Vishay Intertechnologies	MOSFET N-CHANNEL 400V - Tape and Reel (Alt: IRF740ASTRRPBF)	80000: USD1.02965 8000: USD1.08303 6400: USD1.13642 4800: USD1.18219 3200: USD1.22413 1600: USD1.26608 800: USD1.30803	0
IRF740ASTRLPBF IRF740ASTRLPBF	Vishay Intertechnologies	MOSFET N-CHANNEL 400V - Tape and Reel (Alt: IRF740ASTRLPBF)	80000: USD1.02965 8000: USD1.08303 6400: USD1.13642 4800: USD1.18219 3200: USD1.22413 1600: USD1.26608 800: USD1.30803	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740APBF-BE3 78-IRF740APBF-BE3	Vishay Intertechnologies	MOSFET 400V N-CH MOSFET	1: USD1.6 10: USD1.34 100: USD1.06 250: USD0.978 500: USD0.888 1000: USD0.76 2000: USD0.722 5000: USD0.695 10000: USD0.678	5216
IRF740ASPBF 844-IRF740ASPBF	Vishay Intertechnologies	MOSFET N-Chan 400V 10 Amp	1: USD2.28 10: USD1.55 100: USD1.32 250: USD1.29 500: USD1.19 1000: USD1.09 2000: USD1.02 5000: USD0.988	35434
IRF740APBF 844-IRF740APBF	Vishay Intertechnologies	MOSFET 400V N-CH HEXFET	1: USD1.6 10: USD1.34 100: USD1.16 250: USD1.13 1000: USD1.06	2390
IRF740ALPBF 844-IRF740ALPBF	Vishay Intertechnologies	MOSFET 400V N-CH HEXFET TO-26	1: USD2.09 10: USD1.54 100: USD1.36 500: USD1.25 1000: USD1.24	1636
IRF740ASTRLPBF 844-IRF740ASTRLPBF	Vishay Intertechnologies	MOSFET N-Chan 400V 10 Amp	1: USD3.04 10: USD2.53 100: USD2.01 500: USD1.7 800: USD1.11 2400: USD1.07 4800: USD1.03	647

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ASPBF E02:0323_00193424	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK	10000: USD0.8941 5000: USD0.9127 2000: USD0.9154 1000: USD0.9248 500: USD1.0621 250: USD1.0954 100: USD1.1066 10: USD1.2986 1: USD1.7178	1500
IRF740APBF E02:0323_00193415	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB	1000: USD0.8972 250: USD0.9357 100: USD0.9801 10: USD1.1085 1: USD1.2597	920
IRF740APBF V36:1790_07433149	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB	1000: USD0.8501 250: USD0.8762 100: USD0.9053 10: USD0.9889 1: USD1.0795	702
IRF740APBF V99:2348_07433149	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB	100: USD0.7943 10: USD0.817 1: USD0.8463	615
IRF740ALPBF V99:2348_09218877	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262	1: USD0.325 0: USD1.2849	11

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740APBF 70078858	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 400V, RDS(ON) 0.55Ohm, ID 10A, TO-220AB, PD 125W, VGS +/-30V \| Vishay PCS IRF740APBF	1: USD1.62 5: USD1.49 10: USD1.42 100: USD1.29 250: USD1.21	190
IRF740APBF 70459404	Siliconix Vishay	MOSFET N-CH 400V 10A TO-220AB \| Siliconix / Vishay IRF740APBF	1000: USD2.08 10000: USD1.98 50000: USD1.88 100000: USD1.77	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ALPBF	Vishay Semiconductors		8000: USD1.28 3000: USD1.33 1000: USD1.38 500: USD1.45 22: USD1.51	514

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740APBF 79330981	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB	1000: USD0.8929 250: USD0.9312 100: USD0.9753 11: USD1.1031	913
IRF740APBF 61197866	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB	1000: USD0.8501 250: USD0.8762 100: USD0.9053 10: USD0.9889	702
IRF740APBF 66287748	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB	100: USD0.7943 10: USD0.817 8: USD0.8463	615
IRF740ASPBF 70355809	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK	300: USD1.309 200: USD1.388 100: USD1.4917 50: USD1.6325	550
IRF740APBF 69264713	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB	50: USD0.8863 34: USD0.9188	150

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740A	International Rectifier		70: USD0.4219 19: USD0.7313 5: USD1.125	100
IRF740APBF	Vishay Intertechnologies			28
IRF740ASPBF	International Rectifier			16
IRF740ASTRRPBF	Vishay BLH		70: USD0.4219 19: USD0.7313 5: USD1.125	195

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740A	International Rectifier	10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	81: USD0.45 18: USD0.75 1: USD1.5	80
IRF740A	International Rectifier	10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	14: USD1.625 3: USD1.95 1: USD2.6	16
IRF740AS	International Rectifier	POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 400V, 0.55OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	43: USD1.584 13: USD1.8 1: USD2.88	74
IRF740AS	International Rectifier	POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 400V, 0.55OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	43: USD1.584 13: USD1.8 1: USD2.88	45
IRF740ASTRRPBF	Vishay Intertechnologies		81: USD0.45 18: USD0.75 1: USD1.5	156

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740A	Fairchild Semiconductor Corporation	IRF740A - 10A, 400V, 0.55ohm, N-Channel Power MOSFET, TO-220AB '	1000: USD0.8123 500: USD0.86 100: USD0.8983 25: USD0.9365 1: USD0.9556	18

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ASPBF IRF740ASPBF	Vishay Intertechnologies	MOSFETs N-Chan 400V 10 Amp	50: USD1.37 100: USD1.18 250: USD1.14 500: USD1.09 1000: USD1.05 2000: USD1.03	2050
IRF740APBF IRF740APBF	Vishay Intertechnologies	MOSFETs 400V N-CH HEXFET	50: USD1 100: USD0.96 250: USD0.94 500: USD0.92 1000: USD0.9 2000: USD0.88 2500: USD0.85	850
IRF740ASTRRPBF IRF740ASTRRPBF	Vishay Intertechnologies	MOSFETs 400V N-CH HEXFET D2-PA	800: USD1.18 1600: USD1.16 2400: USD1.13 4000: USD1.11	0
IRF740ALPBF IRF740ALPBF	Vishay Intertechnologies	MOSFETs 400V N-CH HEXFET TO-26	1000: USD1.3 2000: USD1.27 4000: USD1.25	0
IRF740ASTRLPBF IRF740ASTRLPBF	Vishay Intertechnologies	MOSFETs N-Chan 400V 10 Amp	800: USD1.11 1600: USD1.09 2400: USD1.07 5600: USD1.05 9600: USD1.03	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ASPBF IRF740ASPBF	Vishay Intertechnologies	Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263	250: USD1 50: USD1.07 10: USD1.18 3: USD1.34 1: USD1.47	1551
IRF740APBF IRF740APBF	Vishay Intertechnologies	Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB	250: USD0.9 50: USD0.96 10: USD1.07 3: USD1.21 1: USD1.34	886
IRF740ALPBF IRF740ALPBF	Vishay Intertechnologies	Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W	1000: USD1.14 250: USD1.22 50: USD1.35 10: USD1.54 1: USD1.71	996
IRF740ASTRLPBF IRF740ASTRLPBF	Vishay Intertechnologies	Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W	800: USD1.05 500: USD1.1 250: USD1.19 100: USD1.32 25: USD1.75 10: USD2.17 1: USD2.51	796

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ASPBF	International Rectifier	HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		100
IRF740APBF	Vishay Siliconix	POWER MOSFET Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		150
IRF740AL	Vishay Siliconix	POWER MOSFET Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		200

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ALPBF	IRF / SILICONIX	Our Stock		19

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ASTRLPBF IRF740ASTRLPBF	Vishay Intertechnologies	MOSFET N-CHANNEL 400V (Alt: IRF740ASTRLPBF)		0
IRF740APBF IRF740APBF	Vishay Intertechnologies	MOSFET N-CHANNEL 400V (Alt: IRF740APBF)		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ASPBF	International Rectifier	IN STOCK SHIP TODAY	1000: USD1.25 100: USD1.44 1: USD1.92	17
IRF740ASPBF	Vishay Intertechnologies	IN STOCK SHIP TODAY	1000: USD1.25 100: USD1.44 1: USD1.92	32

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ALPBF IRF740ALPBF	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262 (Alt: IRF740ALPBF)		12300
IRF740APBF IRF740APBF	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB (Alt: IRF740APBF)		850
IRF740ASPBF IRF740ASPBF	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK (Alt: IRF740ASPBF)		0
IRF740ASTRLPBF IRF740ASTRLPBF	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF740ASTRLPBF)		0
IRF740ASTRRPBF IRF740ASTRRPBF	Vishay Intertechnologies	Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF740ASTRRPBF)		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740ALPBF IRF740ALPBF	Vishay Intertechnologies	Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - TO-262	45: USD1.508 250: USD1.443	514

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRF740APBF	Vishay Siliconix	Single N-Channel 400 V 0.55 Ohms Flange Mount Power Mosfet - TO-220-3	200: USD0.8929 650: USD0.8333	650
IRF740ASPBF	Vishay Siliconix	Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - D2PAK-3	150: USD1.36 700: USD1.27	700
IRF740ALPBF	Vishay Intertechnologies		200: USD1.27 9850: USD1.17	9850
IRF740ASTRLPBF	Vishay Siliconix	Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - D2PAK-3	800: USD1.29 6400: USD1.21	6400

	To Download IRF740A Datasheet File
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