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| PD- 94160 IRF7704 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel VDSS -40V RDS(on) max (m) ) 46@VGS = -10V 74@VGS = -4.5V ID -4.6A -3.7A Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 1 2 3 4 1= 2= 3= 4= D S S G D 8 7 G 6 with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. S 8= 7= 6= 5= D S S D 5 TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -40 -4.6 -3.7 -19 1.5 1.0 12 20 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 83 Units C/W www.irf.com 1 3/19/01 IRF7704 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -40 --- --- --- -1.0 7.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.03 --- --- --- --- --- --- --- --- 25 10 9.5 25 360 190 100 3150 250 200 Max. Units Conditions --- V V GS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 46 VGS = -10V, ID = -4.6A m 74 VGS = -4.5V, ID = -3.7A -3.0 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -4.6A -10 VDS = -32V, VGS = 0V A -25 VDS = -32V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 38 ID = -4.6A 15 nC VDS = -15V 14 VGS = -4.5V --- VDD = -20V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -25V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 29 41 -1.5 A -19 -1.2 44 62 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, I F = -1.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7704 1000 VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP 100 -I D , Drain-to-Source Current (A) 100 -I D , Drain-to-Source Current (A) VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP 10 10 1 1 -2.70V 0.1 -2.70V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 2.0 10.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.6A -I D, Drain-to-Source Current ( ) TJ = 150C 1.5 1.0 1.0 T J = 25C 0.1 0.5 0.0 2.5 3.0 3.5 VDS = -25V 20s PULSE WIDTH 4.0 4.5 5.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -V GS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7704 5000 12 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd ID = -4.6A VDS =-32V VDS =-20V -VGS , Gate-to-Source Voltage (V) 4000 10 C, Capacitance(pF) Ciss 3000 Coss = C + Cgd ds 8 6 2000 4 1000 Coss Crss 0 1 10 100 2 0 0 10 20 30 40 50 60 -V DS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS (on) -ISD , Reverse Drain Current (A) 10 -ID , Drain-to-Source Current (A) 10 100sec TJ = 150 C 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7704 5.0 VDS 4.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 3.0 VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 VGS 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 PDM 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7704 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.08 0.070 0.060 VGS = -4.5V 0.050 0.06 0.040 VGS = -10V 0.030 0.04 ID = -4.6A 0.02 0.0 4.0 8.0 12.0 16.0 0.020 0 4 8 12 16 20 -I D , Drain Current (A) -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7704 3.0 80 -VGS(th) Gate threshold Voltage (V) 60 2.5 Power (W) ID = -250A 40 2.0 20 1.5 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 T J , Temperature ( C ) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 7 IRF7704 TSSOP-8 Package Outline Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 8 www.irf.com |
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