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| SI6475DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.011 @ VGS = -4.5 V -12 12 0.0135 @ VGS = -2.5 V 0.017 @ VGS = -1.8 V ID (A) -10 -9 -8 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D S S D G * Source Pins 2, 3, 6 and 7 must be tied common. SI6475DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs -12 "8 -10 -8 -30 -1.5 1.75 1.14 Steady State Unit V -7.8 -6.2 A -0.95 1.08 0.69 -55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71294 S-01889--Rev. A, 28-Aug-00 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 95 35 Maximum 70 115 45 Unit _C/W 1 SI6475DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -5 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -10 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -2.5 V, ID = -9 A VGS = -1.8 V, ID = -8 A Forward Transconductancea gfs VSD VDS = -15 V, ID = -10 A IS = -1.5 A, VGS = 0 V 20 0.009 0.011 0.014 50 -0.68 -1.1 0.011 0.0135 0.017 W W S V -0.45 "100 -1 -10 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.5 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W 6 V, ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -6 V, VGS = -4.5 V ID = -10 A 6V 4 5 V, 10 49.5 7.7 8.5 56 62 300 185 90 85 100 450 270 150 ns 70 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) 1.5 V I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 25_C 0 6 1V 0 0 2 4 6 8 10 -55_C 1.0 1.5 2.0 0 0.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71294 S-01889--Rev. A, 28-Aug-00 2 SI6475DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 10000 Vishay Siliconix Capacitance VGS = 1.8 V 0.015 VGS = 2.5 V 0.010 VGS = 4.5 V C - Capacitance (pF) 0.020 8000 Ciss 6000 4000 Coss 0.005 2000 Crss 0 0 6 12 18 24 30 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 10 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 10 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 20 30 40 50 60 1.2 2 1.0 1 0.8 0 0 10 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.05 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.04 0.03 ID = 10 A 0.02 TJ = 25_C 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Document Number: 71294 S-01889--Rev. A, 28-Aug-00 www.vishay.com 3 SI6475DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 60 Single Pulse Power, Junction-to-Ambient 50 0.3 V GS(th) Variance (V) Power (W) ID = 250 mA 0.1 40 30 20 -0.1 10 -0.3 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71294 S-01889--Rev. A, 28-Aug-00 |
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