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| FDC6327C July 2000 FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features * * * * * * N-Channel 2.7A, 20V. RDS(on) = 0.08 @ VGS = 4.5V RDS(on) = 0.12 @ VGS = 2.5V P-Channel -1.6A, -20V.RDS(on) = 0.17 @ VGS = -4.5V RDS(on)= 0.25 @ VGS = -2.5V Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). Applications * DC/DC converter * Load switch * Motor driving D2 S1 D1 4 3 5 2 G2 SuperSOT TM -6 S2 G1 TA = 25C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation Parameter N-Channel 20 (Note 1a) P-Channel -20 8 -1.9 -8 0.96 0.9 0.7 Units V V A W 8 2.7 8 (Note 1a) (Note 1b) (Note 1c) TJ, Tstg RJA RJC Operating and Storage Junction Temperature Range -55 to +150 C C/W C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 Package Marking and Ordering Information Device Marking .327 1999 Fairchild Semiconductor Corporation Device FDC6327C Reel Size 7" Tape Width 8mm Quantity 3000 FDC6327C, Rev. E FDC6327C Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward VGS = 0 V, ID = 250 A VGS = 0 V, ID = - 250 A ID = 250 A, Referenced to 25C ID = - 250 A, Referenced to 25C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch All All 20 -20 12 -19 1 -1 100 -100 V mV/C A nA nA Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V (Note 2) On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = - 250 A, Referenced to 25C VGS = 4.5 V, ID = 2.7 A VGS = 4.5 V, ID = 2.7 A, TJ = 125C VGS = 2.5 V, ID = 2.2 A VGS = -4.5 V, ID = -1.6 A VGS = -4.5 V, ID = -1.6 A, TJ = 125C VGS = -2.5 V, ID = -1.3 A VGS = 4.5 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VDS = 5 V, ID = 2.7 A VDS = -5 V, ID = -1.9 A N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch N-Ch P-Ch P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.4 -0.4 0.9 -0.9 -2.1 2.3 0.069 0.094 0.093 0.141 0.203 0.205 1.5 -1.5 V mV/C 0.08 0.13 0.12 0.17 0.27 0.25 8 -8 7.7 4.5 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance P-Channel Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 325 315 75 65 35 24 pF pF pF FDC6327C, Rev. E FDC6327C Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 P-Channel VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 N-Channel VDS = 10 V, ID = 2.7 A, VGS = 4.5V P-Channel VDS = -10 V, ID = -1.9 A,VGS = -4.5V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 7 9 14 12 14 3 3 3.25 2.85 0.65 0.68 0.90 0.65 15 14 18 25 22 25 9 9 4.5 4.0 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 0.8 A (Note 2) Voltage VGS = 0 V, IS = - 0.8 A (Note 2) N-Ch P-Ch N-Ch P-Ch 0.76 -0.79 0.8 -0.8 1.2 -1.2 A V Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally. a) 130 C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 C/W when mounted on a 0.005 in2 pad of 2 oz. copper. c) 180 C/W when mounted on a 0.0015 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDC6327C, Rev. E FDC6327C Typical Characteristics: N-Channel 10 VGS = 4.5V 3.0V 2.5V 2.4 2.2 2 1.8 1.6 VGS = 2.0V 8 6 2.0V 4 1.4 1.2 2.5V 3.0V 3.5V 4.5V 2 1 1.5V 0 0 1 2 3 4 0.8 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.5 1.4 1.3 1.2 1.1 ID = 2.7A VGS = 4.5V 0.25 ID = 1.3A 0.2 0.15 TA = 125 C 0.1 o 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o TA = 25 C 0.05 o 125 150 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = 5V 8 TA = -55 C o 25 C 125 C o o VGS = 0V 1 TA = 125 C 25 C o o 6 0.1 -55 C 0.01 o 4 2 0.001 0 0 1 2 3 4 0.0001 0 0.4 0.8 1.2 1.6 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6327C, Rev. E FDC6327C Typical Characteristics: N-Channel (continued) 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 2.7A 4 15V 3 VDS = 5V 10V 500 f = 1MHz VGS = 0 V 400 CISS 300 2 200 1 100 COSS CRSS 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 8 12 16 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 10 RDS(ON) LIMIT 1ms 10ms 1 100ms 1s DC 100s 5 SINGLE PULSE 4 RJA = 180 C/W TA = 25 C o o 3 2 0.1 VGS = 4.5V SINGLE PULSE RJA = 180 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o o 1 0 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDC6327C, Rev. E FDC6327C Typical Characteristics: P-Channel 10 VGS = -4.5V -3.5V 8 -3.0V 2.4 2.2 2 1.8 -2.5V 1.6 1.4 -2.0V 1.2 1 -1.5V -2.5V -3.0V -3.5V -4.0V -4.5V VGS = -2.0V 6 4 2 0 0 1 2 3 4 5 0.8 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 1.4 1.3 1.2 1.1 1 0.9 ID = -1.9A VGS = -4.5V 0.5 ID = -1A 0.4 0.3 TA = 125 C 0.2 TA = 25 C o o 0.1 0.8 0.7 -50 -25 0 25 50 75 100 o 0 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V 8 TA = -55 C 25 C 125 C 6 o o o 10 VGS = 0V 1 TA = 125 C 0.1 25 C -55 C o o o 4 0.01 2 0.001 0 0 1 2 3 4 0.0001 0 0.4 0.8 1.2 1.6 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6327C, Rev. E FDC6327C Typical Characteristics: P-Channel (continued) 5 ID = -1.9A 4 -15V 3 VDS = -5.0V -10V 450 400 350 CISS 300 250 200 150 f = 1 MHz VGS = 0 V 2 1 100 50 COSS CRSS 0 4 8 12 16 20 0 0 0.5 1 1.5 2 2.5 3 3.5 0 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate-Charge Characteristics. Figure 18. Capacitance Characteristics. 10 RDS(ON) LIMIT 1ms 10ms 1 DC 1s 100ms 100s 5 SINGLE PULSE 4 RJA = 180 C/W TA = 25 C o o 3 2 0.1 VGS = -4.5V SINGLE PULSE RJA = 180 C/W TA = 25 C 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) o o 1 0 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. FDC6327C, Rev. E FDC6327C Typical Characteristics: N & P-Channel 1 TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 (continued) r(t), NORMALIZED EFFECTIVE 0.2 0.1 0.05 0.2 0.1 0.05 0.02 0.01 Single Pulse R JA (t) = r(t) * R JA R JA = 180C/W P(pk) t1 t2 0.02 0.01 0.0001 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.01 0.1 t 1 TIME (sec) , 1 10 100 300 0.001 Figure 21. Transient Thermal Response Curve. FDC6327C, Rev. E SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figur e 1.0 Packaging Description: Customize Label Anti static Cover Tape SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains three reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Label Embossed Carrier Tape 631 631 SSOT-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no f l ow c ode ) 631 631 631 Pin 1 D87Z TNR 10,000 13" 343x343x64 30,000 0.0158 0.4700 TNR 3,000 7" Dia 184x187x47 9,000 0.0158 0.1440 SSOT-6 Unit Orientation 343mm x 342mm x 64mm Intermediate box fo r D87Z Option F63TNR Label F63TNR Label F63TNR Label sa mpl e 184mm x 187mm x 47mm Pizza Box fo r Standar d Opti on F63TNR Label LOT: CBVK741B019 FSID: FDC633N QTY: 3000 SPEC: SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Comp onent s Traile r Tape 300mm mi nimum or 75 empty poc kets Lead er Tape 500mm mi nimum or 125 emp ty poc kets 1998 Fairchild Semiconductor Corporation August 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-6 (8mm) A0 3.23 +/-0.10 B0 3.18 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.255 +/-0.150 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 - 0.429 7.9 - 10.9 0.311 - 0.429 7.9 - 10.9 8mm 13" Dia July 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SuperSOT -6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 1998 Fairchild Semiconductor Corporation September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1 |
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