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| NE21935 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES INCLUDE: * High frequency 8.0 GH * Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG JC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 C -65 C to +200 C -65 C to +200 C 80 C/W 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB fT |S21E| TC = 25 C TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 20 mA IC = 20 mA f = 1.0 GHz f = 2.0 GHz IC = 20 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 1.0 1.0 30 100 0.4 8.0 15.5 8.0 9.0 300 1.0 UNITS A A --pF GHz dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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