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| SI4465DY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) 0.009 @ VGS = - 4.5 V 0.011 @ VGS = - 2.5 V 0.016 @ VGS = - 1.8 V ID (A) - 14 - 12 - 10 SSS SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4465DY SI4465DY-T1 (with Tape and Reel) 8 7 6 5 D D D D G DDDD P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -8 "8 - 14 - 11 - 40 - 2.1 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70830 S-31989--Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Symbol RthJA Typical 80 Maximum 50 Unit _C/W 1 SI4465DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 8 V, VGS = 0 V VDS = - 8 V, VGS = 0 V, TJ = 55_C VDS w - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 14 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 12 A VGS = - 1.8 V, ID = - 10 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 10 V, ID = - 14 A IS = - 2.1 A, VGS = 0 V - 20 0.007 0.009 0.012 60 0.7 - 1.2 0.009 0.011 0.016 S V W - 0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 4 V, RL = 4 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 4 V, VGS = - 4.5 V, ID = - 14 A 80 15 9 45 55 380 190 80 90 110 760 380 120 ns 120 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70830 S-31989--Rev. B, 13-Oct-03 SI4465DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 40 Output Characteristics VGS = 5 thru 2 V 40 Transfer Characteristics 32 I D - Drain Current (A) I D - Drain Current (A) 32 24 1.5 V 24 16 16 TC = 125_C 8 25_C - 55_C 8 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0.04 On-Resistance vs. Drain Current 14000 12000 Capacitance r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.03 Ciss 10000 8000 6000 4000 2000 0 Coss 0.02 VGS = 1.8 V 0.01 VGS = 2.5 V VGS = 4.5 V 0.00 0 8 16 24 32 40 Crss 0 2 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 14 A Gate Charge 1.4 1.3 1.2 1.1 1.0 0.9 0.8 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 14 A 3 2 1 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Document Number: 70830 S-31989--Rev. B, 13-Oct-03 r DS(on) - On-Resistance (W) (Normalized) 4 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI4465DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.04 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.03 10 TJ = 150_C 0.02 TJ = 25_C 0.01 ID = 14 A 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 50 10 Power (W) 30 ID = 250 mA 50 Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70830 S-31989--Rev. B, 13-Oct-03 4 |
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