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| SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT758 C1 C1 C2 C2 PARTMARKING DETAIL T758 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -400 -400 -5 -1 -0.5 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 354 ZDT758 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) MIN. -400 -400 -5 -100 -100 -100 -0.30 -0.25 -0.50 -0.9 -0.9 50 50 40 50 20 140 2000 MHz pF ns ns TYP. MAX. UNIT V V V nA nA nA V V V V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-320V VCE=-320V VEB=-4V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* IC=-20mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-100mA, VC=-100V IB1=10mA, IB2=-20mA VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Switching times fT Cobo t on toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 355 ZDT758 TYPICAL CHARACTERISTICS 1.6 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25C 1.6 -55C +25C +100C +175C IC/IB=10 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 - (Volts) V 0.01 0.1 1 10 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 V I+ - Collector Current (Amps) 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 300 1.6 1.4 -55C +25C +100C +175C IC/IB=10 - (Volts) V 200 100 - Typical Gain 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 h 0.01 0.1 1 10 20 I+ - Collector Current (Amps) h I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C +175C VCE=10V - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) VBE(on) v IC 3 - 356 |
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