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NTE295 Silicon NPN Transistor RF Power Output, Driver
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Emitter Voltage (RBE = 150), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol ICBO IEBO Test Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 Min - - 75 75 45 5 60 180 - - - 1.0 60 Typ - - - - - - - 250 0.2 0.9 15 1.8 - Max 1.0 1.0 - - - - 320 - 0.6 1.2 25 - - V V pF W % Unit A A V V V V
V(BR)CBO IC = 10A, IE = 0 V(BR)CER IC = 1mA, RBE = 150 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 hFE fT VCE(sat) VBE(sat) Cob PO VCE = 5V, IC = 500mA VCE = 10V, IC = 50mA IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA VCB = 10V, f = 1MHz VCC = 12V, f = 27MHz, Pi = 35mW
Emitter-Base Breakdown Voltage DC Current Gain Current Gain Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Output Power Collector Efficiency
.330 (8.38) Max
.175 (4.45) Max .450 (11.4) Max
.118 (3.0) Dia
.655 (16.6) Max
.030 (.762) Dia
E
C
B
.090 (2.28) .130 (3.3) Max

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Price & Availability of NTE295

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE295 04X3727	NTE Electronics Inc	Operating Frequency Min:-; Transition Frequency:250Mhz; Dc Current Gain Hfe:60Hfe; Continuous Collector Current Ic:1A; Noise Figure Typ:-; Forward Current Transfer Ratio:-; Collector Emitter Voltage V(Br)Ceo:75V; Power Gain, Gp:- Rohs Compliant: Yes \|Nte Electronics NTE295		0
NTE2959 31C3778	NTE Electronics Inc	Power Mosfet N-Channel 900V Id=5A To-220Fn Case High Speed Switch \|Nte Electronics NTE2959		0
NTE2953 31C3772	NTE Electronics Inc	Power Mosfet N-Channel 60V Id=70A To-220Fn Case High Speed Switch \|Nte Electronics NTE2953		0
NTE2956 31C3775	NTE Electronics Inc	Mosfet (Metal-Oxide-Semiconductor Field-Effect Transistor) \|Nte Electronics NTE2956		0
NTE2951 76AC1427	NTE Electronics Inc	Power Mosfet N-Channel 600V Id=43A To-247 Case High Speed Switch Ideal For Ups And Dc-Dc Converters \|Nte Electronics NTE2951		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE295 2368-NTE295-ND	NTE Electronics Inc	RF TRANS NPN 75V 250MHZ TO126	100: USD1.64 50: USD1.68 20: USD1.78 10: USD1.88 1: USD1.98	390

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE295	NTE Electronics Inc	Transistor NPN Silicon 75V IC=1A TO-126 Case rf Power Output/driver	5000: USD1.38 2500: USD1.41 1000: USD1.46 500: USD1.52 250: USD1.61 100: USD1.73 25: USD2.02 1: USD2.22	20

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2953 51646109	NTE Electronics Inc	Trans MOSFET N-CH 100V 70.4A 3-Pin(3+Tab) TO-220	250: USD9.1 25: USD10.4 5: USD13	10

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE295	NTE Electronics Inc		2: USD2.8	3
NTE295	NTE Electronics Inc			1
NTE295	NTE Electronics Inc			2
NTE2955	NTE Electronics Inc			2

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE295	NTE Electronics Inc	SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 45V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-126	4: USD2.07 1: USD3.105	6
NTE295	NTE Electronics Inc	SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 45V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-126	1: USD3.465	1
NTE295	NTE Electronics Inc	SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 45V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-126	1: USD3.75	2
NTE2955	NTE Electronics Inc		1: USD4.5	1

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE295 NTE295	NTE Electronics Inc	Transistor: NPN; bipolar; RF; 75V; 1A; 5W; TO126	25: USD1.52 10: USD1.69 3: USD1.91 1: USD2.12	5
NTE2951 NTE2951	NTE Electronics Inc	Transistor: N-MOSFET; unipolar; 600V; 43A; Idm: 172A; 600W; TO247	25: USD10.6 10: USD11.8 3: USD13.4 1: USD14.9	0
NTE2959 NTE2959	NTE Electronics Inc	Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 30W; TO220FN	25: USD5.1 10: USD5.68 3: USD6.43 1: USD7.14	0
NTE2957 NTE2957	NTE Electronics Inc	Transistor: N-MOSFET; unipolar; 700V; 5A; Idm: 15A; 30W; TO220FN	25: USD2.31 10: USD2.57 3: USD2.91 1: USD3.23	14
NTE2954 NTE2954	NTE Electronics Inc	Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 360A; 83W; TO220FN	25: USD8.39 10: USD9.34 3: USD10.6 1: USD11.7	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE295	NTE Electronics Inc	Transistor NPN Silicon 75V IC=1A TO-126 Case rf Power Output/driver	5000: USD1.38 2500: USD1.41 1000: USD1.46 500: USD1.52 250: USD1.61 100: USD1.73 25: USD2.02 1: USD2.22	20

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