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| PNP Silicon Transistor For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q SMBTA 70 Type SMBTA 70 Marking s2C Ordering Code (tape and reel) Q62702-M0003 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VEB0 IC ICM IBM Ptot Tj Tstg Values 40 4 100 200 100 330 150 - 65 ... + 150 Unit V mA mW C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 70 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Emitter-base breakdown voltage IE = 100 A Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo 125 - - - - 4 MHz pF V(BR)CE0 V(BR)EB0 ICB0 - - IEB0 hFE VCEsat - 40 - - - - - - 100 20 20 400 0.25 nA A Values typ. max. Unit 40 4 - - - - V nA - V 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SMBTA 70 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Base-emitter saturation voltage VBE sat = f (IC), hFE = 40 Semiconductor Group 3 SMBTA 70 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 40 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4 |
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