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NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.48 (max) NUltra High-Speed Switching NSOT-23 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP152A01D8MR is a P-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.48(Vgs=-4.5V) : Rds(on)=0.80(Vgs=-2.5V) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOT-23 11 PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 12 -0.5 -1.5 -0.5 0.5 150 -55~150 Ta=25: UNITS V V A A A W : : Note: When implemented on a ceramic PCB 834 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-20V, Vgs=0V Vgs=12V, Vds=0V Id=-1mA, Vds=-10V Id=-0.3A, Vgs=-4.5V Id=-0.3A, Vgs=-2.5V Id=-0.3A, Vds=-10V If=-0.5A, Vgs=0V MIN TYP MAX -10 10 -0.5 0.36 0.6 1 -0.8 -1.1 0.48 0.8 UNITS A A V S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 180 100 35 MAX Ta=25: UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-0.3A Vdd=-10V CONDITIONS MIN TYP 10 15 30 70 MAX Ta=25: UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS :/W 11 835 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=-10V Drain Current:Id (A) Drain-Source Voltage:Vds (V) Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: Drain-Source On-State Resistance :Rds (on) () Gate-Source Voltage:Vgs (V) Drain-Source On-State Resistance :Rds (on) () Drain Current:Id (A) 11 Drain-Source On-State Resistance :Rds (on) () DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test, Ta=25: GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (:) Ambient Temp.:Topr (:) 836 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz SWITCHING TIME vs. DRAIN CURRENT Vgs=-5V, Vdd -10V, PW=10sec. duty1% Drain-Source Voltage:Vds (V) Switching Time:t (ns) Capacitance:c (pF) Drain Current:Id (A) Single Pulse 11 837 |
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