PART |
Description |
Maker |
1214-800P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-110V |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-370V |
Pulsed Power L-Band (Si)
|
Microsemi
|
2731-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
3134-65M |
Pulsed Power S-Band (Si)
|
Microsemi
|
HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR 1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz high power COMMON BASE bipolar transistor.
|
Microsemi, Corp. ETC[ETC] GHZTECH[GHz Technology] List of Unclassifed Manufacturers
|
HVV1012-060 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Apllications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
|
HVVi Semiconductors, Inc.
|
MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
PH1214-20EL |
Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz Radar Pulsed Poewr Transistor20W 雷达脉冲Poewr晶体管,20
|
Tyco Electronics Rhopoint Components, Ltd.
|
|