| PART |
Description |
Maker |
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| IPW60R041P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA50R650CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STL90N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STP80N6F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| STL66N3LLH5 |
High avalanche ruggedness
|
STMicroelectronics
|
| STP130N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R1K0CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STF140N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R800CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STH315N10F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|
