| PART |
Description |
Maker |
| V10P6HM3 V10P6-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| MBRF10100 MBRF10100-E34W MBRB10100 MBRB10100-E34W |
Trench MOS Schottky technology
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| V10WL45-M3 V10WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| 6L45SB-SMBF |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| TSF10U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| VT10200C-E3 VFT10200C-E3 VBT10200C-E3 VIT10200C-E3 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VT1045CBP-15 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| 3L60-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
