| PART |
Description |
Maker |
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| BTA12-600BW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| PS11011 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| PM50B4LA06007 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM200CSE06005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM25CLB12005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RLA12005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSD060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSA060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
