| PART |
Description |
Maker |
| APTDF200H60G |
FRED 50-1700V
|
Microsemi
|
| APTDF30H601G |
FRED 50-1700V
|
Microsemi
|
| APT30DF20HJ |
FRED 50-1700V
|
Microsemi
|
| APT50DF170HJ |
FRED 50-1700V
|
Microsemi
|
| APTDF400AK170G |
FRED 50-1700V
|
Microsemi
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| CM300DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| C67047-A2251-A2 BYP301 |
FRED-FET Diode
CAT5E 350MHZ PATCH CORD, 1 FT BLUE,SNAGLESS BOOT
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SIDC110D170H |
Diodes - HV Chips - SIDC110D170H, 1700V, 200A
|
Infineon
|
| ENA1967 |
N-Channel Power MOSFET, 1700V, 3A, 10.5Ohm, TO-3PF-3L
|
ON Semiconductor
|
| 2MBI450VN-170-50 |
IGBT MODULE (V series) 1700V / 450A / 2 in one package
|
Fuji Electric
|
