PART |
Description |
Maker |
MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM 1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp http:// Winbond Electronics, Corp.
|
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM 1M x 4 BANKS x 16 BITS SDRAM From old datasheet system BGA SDRAM
|
WINBOND[Winbond] Winbond Electronics
|
K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643 |
LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W9812G2IB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
54S416T |
1M x 4 Banks x 16 BITS SDRAM
|
Ceramate
|
W9825G6JH |
4M X 4 BANKS X 16 BITS SDRAM
|
Winbond
|
W982516AH |
4m x 8 bit x 16 Banks SDRAM
|
Winbond
|