| PART |
Description |
Maker |
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC Max Power 43 W BTL ??4 ch Audio Power IC Max Power 43 W BTL 】 4 ch Audio Power IC IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC Max Power 43 W BTL × 4 ch Audio Power IC Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
|
International Rectifier List of Unclassifed Man...
|
| POWER-32D POWER-22D POWER-12D |
(POWER-12D/-22D/-32D) Low power off-line switching power supply control chip
|
Xin Ke
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
| 2SC5993 |
Power Device - Power Transistors - Television/Display For power amplification For TV VM circuit
|
PANASONIC[Panasonic Semiconductor]
|
| NTC10D20 NTC100D10 NTC100D11 NTC100D9 NTC10D10 NTC |
Conversion power, switch mode power supply, UPS power protection
|
List of Unclassifed Man...
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
| 2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0938 2SB0938A 2SB938 2SB938A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1272 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
|