| PART |
Description |
Maker |
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| PCH-27-103L PCH-27-104L PCH-27-105L PCH-27-106L PC |
Axial Lead Power Chokes
Power inductor, 10% tol, RoHS 1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 120 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 12000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 8200 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 6.8 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 18000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 680 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 6800 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 2700 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 15000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
|
Coilcraft lnc.
Coilcraft, Inc.
COILCRAFT INC
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| ATMEGA103-14 |
AVR ?High-performance and Low-power RISC Architecture
Power Consumption when Using Slowly Rising Power Supply
|
ATMEL Corporation
|
| STR-Y6753 STR-Y6763 STR-Y6754 STR-Y6735 STR-Y6700 |
Power IC for Quasi-Resonant Mode Switching Power Supplies with Low Standby Power
|
Sanken electric
|
| 2SD1745 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
|
