| PART |
Description |
Maker |
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 2SK2040 2SK2040JM 2SK2040-Z 2SK2040-Z-E1 2SK2040-Z |
High-freq. SW power supply, AC adapter power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| STR-Y6753 STR-Y6763 STR-Y6754 STR-Y6735 STR-Y6700 |
Power IC for Quasi-Resonant Mode Switching Power Supplies with Low Standby Power
|
Sanken electric
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
| FLS2100XS |
The FLS-XS series of general lighting power controllers includes highly integrated power switches for medium - to high-power lumens applications.
|
List of Unclassifed Man...
|
| U5T12.12.5 R5T12.2.5 U28S15.45 U28S24.4 R28D15.22 |
Low power quad operational amplifiers
High power 3-phase auxiliary power supply evaluation board based on L5991 and ESBT STC08DE150HV
Evaluation board using 1x SD3932 for HF transmitters
VIPer12A travel adaptor 3.6W output
Analog IC 模拟IC
RF power amplifier using 1 x PD55008 N-channel enhancement-mode lateral MOSFETs 模拟IC
RF power amplifier using 1 x PD55008L 模拟IC
|
Electronic Theatre Controls, Inc.
KEMET Corporation
Bourns, Inc.
MITSUMI ELECTRIC CO., LTD.
|
| 2SD1445A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
