| PART |
Description |
Maker |
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4BC20U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRG4PC50K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
|
IRF[International Rectifier]
|
| IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
