| PART |
Description |
Maker |
| STGW60H65F |
650 V field stop trench gate IGBT
|
STMicroelectronics
|
| FGH50T65UPD |
650V, 50A, Field Stop Trench IGBT
650 V, 50 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| FGH15T120SMD |
1200V, 15A, Field Stop Trench IGBT
1200 V, 15 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| STGWT30H65FB STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
|
ST Microelectronics
|
| STGB15M65DF2 |
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
|
STMicroelectronics
|
| STGF15M65DF2 |
Trench gate field-stop IGBT M series, 650 V 15 A low loss
|
STMicroelectronics
|
| APTGT150DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 225 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT225A170 |
340 A, 1700 V, N-CHANNEL IGBT
Phase leg Trench Field Stop IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APTGT200H120G |
Full - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
