PART |
Description |
Maker |
TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS V(drm): 50V; 8A; glass passivated thyristor V(drm): 1000V; 8A; glass passivated thyristor V(drm): 100V; 8A; glass passivated thyristor V(drm): 200V; 8A; glass passivated thyristor V(drm): 400V; 8A; glass passivated thyristor V(drm): 600V; 8A; glass passivated thyristor V(drm): 800V; 8A; glass passivated thyristor
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STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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UF2A-UF2M HS2A-HS2M HS2K UF2A UF2J |
Glass Ultrafast Recovery Rectifiers Glass High Efficiency Rectifiers SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
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HY ELECTRONIC CORP.
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1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
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Chenyi Electronics http://
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RU2AG RU2BG RU2DG RU2GG RU2JG RU2KG RU2MG |
Ultra Fast Recovery Pack: DO-15 FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A (RU2AG - RU2MG) FULTRAFAST EFFICIENT GLASS
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Gulf Semiconductor
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1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存??? Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流(钝化玻璃结型整流器) GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
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GE Security, Inc. GE[General Semiconductor]
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AZ983-1C-12D AZ983-1C-6D AZ983-1C-24D AZ983 AZ983- |
CAPACITOR;GLASS;33PF;5%;300V CAPACITOR, FIXED, GLASS 1000PF /- 5%, 300V T&R / HICV JAPAN - FN RoHS Compliant: No CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 80 AMP AUTOMOTIVE RELAY
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers ZETTLER electronics
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GS1J-T1 GS1J-T3 GS1A GS1M-T3 GS1A-T1 GS1A-T3 GS1B- |
CHOKE RF CONFORMAL COATED 0.68UH 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 安培表面贴装玻璃钝化整流 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
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WTE[Won-Top Electronics] Won-Top Electronics Co., Ltd. WON-TOP ELECTRONICS CO LTD
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HER30-1500G |
Fast Recovery Pack: DO-201AD ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞1500V CURRENT拢潞 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?500V CURRENT 3.0A
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Gulf Semiconductor
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1R5GU41 |
Ultra Fast Recovery Pack: DO-15 ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞400V CURRENT拢潞1.5A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?00V CURRENT?.5A
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Gulf Semiconductor
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GDZJ3.0 GDZJ4.3 GDZJ2.7 GDZJ2.0 GDZJ2.2 GDZJ2.4 GD |
5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 AXIAL LEAD ZENER DIODES
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Pan Jit International I... Rohm Co., Ltd. Diodes, Inc. NXP Semiconductors N.V. Pan Jit International Inc.
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30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N |
(1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
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http:// RECTRON[Rectron Semiconductor]
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