| PART |
Description |
Maker |
| EBD21RD4ADNA-E EBD21RD4ADNA-6B-E EBD21RD4ADNA-7A-E |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
DRAM
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| EM6GE16EWXC EM6GE16EWXC-12H |
256M x 16 bit DDR3 Synchronous DRAM
|
EtronTech
|
| HYB25DC256160C |
(HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
| HY5DU561622T HY5DU56822T |
16Mx16|2.5V|8K|K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的| /升| DDR SDRAM内存- 256M
32Mx8|2.5V|8K|K/H/L|DDR SDRAM - 256M 32Mx8 |.5V | 8K的| /升| DDR SDRAM内存- 256M
|
STMicroelectronics N.V.
|
| HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) 256M超过16057型快闪记忆体部门71299072位）
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| MX25L25635E MX25L25635EMI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX23L25611 MX23L25611MC-12 23L25611-10 23L25611-12 |
256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)
|
MXIC
MCNIX[Macronix International]
|
| MC-4R512FKE6D MC-4R512FKE6D-653 MC-4R512FKE6D-745 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R256FKE6D-840 |
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HN29V25611ANBSP HN29V25611A HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
| HM52Y25405B-B6 HM52Y25405BTT-B6 HM52Y25165B-B6 HM5 |
256M SDRAM 100 MHz 4-Mword × 16-bit × 4-bank /16-Mword × 4-bit × 4-bank
256M SDRAM 100 MHz 4-Mword 隆驴 16-bit 隆驴 4-bank /16-Mword 隆驴 4-bit 隆驴 4-bank
|
Elpida Memory
|
